Infineon Technologies Dresden Gmbh

Infineon Technologies Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Infineon Technologies Austria Ag

Maik Stegemann

Mirko Vogt

Thoralf Kautzsch

Heiko Froehlich

Steffen Bieselt

Andre Roeth

Bernhard Winkler

Boris Binder

Alessia Scire

Uwe Rudolph

Andre Röth

Heiko Fröhlich

Andreas Riegler

Stephan Wege

Wolfgang Jantscher

Markus M Kirchhoff

Manfred Pippan

Thomas Santa

Marco Haubold

Markus Burian

Horst Theuss

Armin Tilke

Henning Feick

Bernhard Knott

Stefano Parascandola

Wolfram Langheinrich

Oliver Genz

Thomas Popp

Thomas Bertrams

Momtchil Stavrev

Barbara Schmidt

Wolfgang Gustin

Ludwig Dittmar

Alexander Reb

Olga Khvostikova

Guenther Czech

Carsten Fuelber

Stephan Machill

Sascha Weber

A power semiconductor component includes a power semiconductor partial structure having an insulating layer arranged on an upper side of a semiconductor body. A contact hole arranged on an upper side of the insulating layer proceeds from that side, extending at least partly within the insulating layer. An adhesion promoter layer arranged on an upper side of the power semiconductor partial structure at least partly covers the insulating layer upper side and a surface of the contact hole. A tungsten-comprising layer arranged on the adhesion promoter layer at least partly covers the adhesion promoter layer and has a first thickness in a region of the contact hole and dimensioned such that the tungsten-comprising layer fills the contact hole. The tungsten-comprising layer has a second thickness in the region of the insulating layer upper side which is less than the first thickness. A connection layer is arranged on the tungsten-comprising layer.

Contact hole

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. The support structure, for example, a pole, suspension or a post, is fixedly connected to the semiconductor substrate, which may comprise silicon. The electrode element is fixedly connected to the support structure. Moreover, the seismic mass is connected over the spring element to the support structure so that the seismic mass is displaceable, deflectable or movable with respect to the electrode element. Moreover, the seismic mass and the electrode element form a capacitor having a capacitance which depends on a displacement between the seismic mass and the electrode element.

Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. The light emitter device contains an upper portion of a cavity located vertically between the heater carrier structure and a cover structure. The light emitter device contains a lower portion of the cavity located vertically between the heater carrier structure and at least a portion of a carrier substrate. The heater carrier structure contains a plurality of holes connecting the upper portion of the cavity and the lower portion of the cavity. A pressure within the cavity is less than 100 mbar.

Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures

A method of generating a germanium structure includes performing an epitaxial depositing process on an assembly of a silicon substrate and an oxide layer, wherein one or more trenches in the oxide layer expose surface portions of the silicon substrate. The epitaxial depositing process includes depositing germanium onto the assembly during a first phase, performing an etch process during a second phase following the first phase in order to remove germanium from the oxide layer, and repeating the first and second phases. A germanium crystal is grown in the trench or trenches. An optical device includes a light-incidence surface formed by a raw textured surface of a germanium structure obtained by an epitaxial depositing process without processing the surface of the germanium structure after the epitaxial process.

Method of generating a germanium structure and optical device comprising a germanium structure

A MOSFET includes a semiconductor body having a first side, a drift region, a body region forming a first pn-junction with the drift region, a source region forming a second pn-junction with the body region, in a vertical cross-section, a dielectric structure on the first side and having an upper side; a first gate electrode, a second gate electrode, a contact trench between the first and second gate electrodes, extending through the dielectric structure to the source region, in a horizontal direction a width of the contact trench has, in a first plane, a first value, and, in a second plane, a second value which is at most about 2.5 times the first value, and a first contact structure arranged on the dielectric structure having a through contact portion arranged in the contact trench, and in Ohmic contact with the source region.

Methods for manufacturing a MOSFET

In a method for producing a buried cavity in a semiconductor substrate, trenches are produced in a surface of a semiconductor substrate down to a depth that is greater than cross-sectional dimensions of the respective trench in a cross section perpendicular to the depth, wherein a protective layer is formed on sidewalls of the trenches. Isotropic etching through bottom regions of the trenches is carried out. After carrying out the isotropic etching, the enlarged trenches are closed by applying a semiconductor epitaxial layer to the surface of the semiconductor substrate.

Producing a buried cavity in a semiconductor substrate

A method for manufacturing a microelectromechanical systems (MEMS) device, includes forming a cavity in a bulk semiconductor substrate; defining a movably suspended mass in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity; arranging a cap structure on the main surface area of the bulk semiconductor substrate; and forming a capacitive structure. Forming the capacitive structure includes arranging a first electrode structure on the movably suspended mass; and providing a second electrode structure at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

Microelectromechanical device, method for manufacturing a microelectromechanical device, and method for manufacturing a system on chip using a CMOS process

A method for manufacturing a MOSFET semiconductor device includes providing a wafer including a semiconductor body having a first side, a first semiconductor region adjacent to the first side, a second semiconductor region adjacent to the first side and forming a first pn-junction with the first semiconductor region, and a third semiconductor region adjacent to the first side and forming a second pn-junction with the second semiconductor region, a first dielectric layer arranged on the first side, a gate electrode embedded in the first dielectric layer, and a second dielectric layer arranged on the first dielectric layer. Next to the gate electrode, a trench is formed through the first dielectric layer and the second dielectric layer. At a side wall of the trench, a dielectric spacer is formed. The trench is extended into the semiconductor body to form a contact trench.

A semiconductor device may include a stress decoupling structure to at least partially decouple a first region of the semiconductor device and a second region of the semiconductor device. The stress decoupling structure may include a set of trenches that are substantially perpendicular to a main surface of the semiconductor device. The first region may include a micro-electro-mechanical (MEMS) structure. The semiconductor device may include a sealing element to at least partially seal openings of the stress decoupling structure.

Stressed decoupled micro-electro-mechanical system sensor

A microelectromechanical systems (MEMS) device is provided and includes a bulk semiconductor substrate, a cavity formed in the bulk semiconductor substrate, a movably suspended mass, a cap structure and a capacitive structure is shown. The movably suspended mass is defined in the bulk semiconductor substrate by one or more trenches extending from a main surface area of the bulk semiconductor substrate to the cavity. The cap is structure arranged on the main surface area of the bulk semiconductor substrate. The capacitive structure comprises a first electrode structure arranged on the movably suspended mass and a second electrode structure arranged at the cap structure such that the first electrode structure and the second electrode structure are spaced apart in a direction perpendicular to the main surface area of the bulk semiconductor substrate.

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.

Integrated semiconductor device and manufacturing method

A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.

Pressure sensor device and manufacturing method

Growing community of inventors

Pesterwitz, Germany

Maik Stegemann