Siltronic Ag

Maik Haeberlen

Brian Murphy

Georg Brenninger

Thomas Schroeder

Sarad Bahadur Thapa

Bernd Stritzker

Waldemar Stein

Marvin Zoellner

Joerg Lindner

Problems associated with the mismatch between a silicon substrate and a group-IIIA nitride layer are addressed by employing a silicon substrate processed to have a surface comprising closely spaced tips extending from the surface, depositing a group-IIIB silicide layer on the tips, then depositing a group-IIIB nitride layer, and then depositing a group-IIIA nitride.

Semiconductor wafer comprising a monocrystalline group-IIIA nitride layer

An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate;

Apparatus and process for producing a single crystal of silicon

Semiconductor structures are produced by providing a 3C&#x2014;SiC semiconductor layer containing a monocrystalline 3C&#x2014;SiC layer by implantation of carbon in silicon on a first silicon substrate and applying an epitaxial layer of nitride compound semiconductor suitable for the generation of optoelectronic components onto the 3C&#x2014;SiC semiconductor layer structure, wherein the epitaxial layer of nitride semiconductor is transferred onto a second substrate by bonding the nitride layer onto the second substrate surface and mechanically or chemically removing silicon and layers containing SiC, the second substrate being a metal with a reflectivity &#x2267;80% or being substantially transparent.

Method for the production of a semiconductor structure

Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region () enriched with impurity atoms, which region is situated either in layer () or at a specific depth below the interface between layer () and substrate (), additionally a layer () within the region () enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer () applied to layer () and also a defect region () comprising dislocations and stacking faults within the layer () comprising cavities, the at least one epitaxial layer () being largely crack-free, and a residual strain of the at least one epitaxial layer () being less than or equal to 1 GPa.

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Burghausen, Germany

Maik Haeberlen