Samsung Display Co., Ltd.

Maidanchuk Ivan

Minsu Lee

Seungrok Lee

Wonbaek Lee

Dong-Hyun Lee

Byung-Soo So

Won-Pil Lee

A display device includes a substrate, a pixel electrode, an encapsulation layer, and a light-shielding layer. The pixel electrode is positioned above the substrate. The encapsulation layer is disposed over the pixel electrode. The encapsulation layer includes a first inorganic layer. The first inorganic layer includes a plurality of fine pillar patterns. The pillar patterns are sloped with respect to one surface of the substrate. The light-shielding layer is disposed on the encapsulation layer. The light-shielding layer includes a first opening. The first opening overlaps at least a portion of the pixel electrode.

Display device and a method of manufacturing the same

A color filter includes a first filter. The first filter includes a first color forming material, a first quantum dot, and a first metal nanoparticle, the first filter exhibiting a first color.

High-luminance display apparatus

An organic light-emitting display apparatus includes: a substrate; a pixel electrode above the substrate; an intermediate layer above the pixel electrode and including an organic emission layer; an opposite electrode above the intermediate layer; and an encapsulation structure above the opposite electrode and including at least one inorganic film and at least one organic film. A difference between a refractive index of the at least one inorganic film and a refractive index of the at least one organic film is in a range between about 0.3 to about 0.5. A thickness of the at least one inorganic film is in a range of about 0.7 &#x3bc;m to about 1.5 &#x3bc;m. A thickness of the at least one organic film is in a range of about 3.5 &#x3bc;m to about 6.5 &#x3bc;m.

Organic light-emitting display apparatus

A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

Method and system for monitoring crystallization of amorphous silicon thin film, and method of manufacturing thin film transistor by using the method and system

Growing community of inventors

Yongin-si, South Korea

Maidanchuk Ivan