Nvidia Corporation

Mahmut Ersin Sinangil

John Wood Poulton

William James Dally

Nikola Nedovic

John H Edmondson

Brucek Kurdo Khailany

Carl Thomas Gray

Sudhir Shrikantha Kudva

Brian Matthew Zimmer

Arijit Banerjee

PUF cells utilizing a dual-interlocking scheme demonstrating improved noise immunity and stability across different V/T conditions and different uses over time in noisy environments. The PUF cell may be advantageously utilized in conjunction with error detection techniques that screen out unstable cells. A set of such PUF cells utilized to generate a device-specific bit pattern, for example a master key.

Physically unclonable cell using dual-interlocking and error correction techniques

One embodiment provides, in a sense amplifier for an electronic memory array in which a selected memory cell drives a developing voltage differential according to a logic state of the memory cell, a method to store the logic state. The method includes poising source voltages of first and second transistors at levels offset, respectively, by threshold voltages of the first and second transistors. The method also includes applying the voltage differential between a gate of the first transistor and a gate of the second transistor, the first and second transistors configured to oppose each other in a cross-coupled inverter stage of the sense amplifier.

Sense amplifier with transistor threshold compensation

A subsystem is configured to apply an offset voltage to a test, or canary, SRAM write driver circuit to create a condition that induces failure of the write operation. The offset voltage is incrementally increased until failure of the test write operation occurs in the canary SRAM circuit. The subsystem then calculates a probability of failure for the actual, non-test SRAM write operation, which is performed by an equivalent driver circuit with zero offset. The subsystem then compares the result to a benchmark acceptable probability figure. If the calculated probability of failure is greater than the benchmark acceptable probability figure, corrective action is initiated. In this manner, actual failures of SRAM write operations are anticipated, and corrective action reduces their occurrence and their impact on system performance.

Approach to predictive verification of write integrity in a memory driver

A system and device are provided for implementing memory arrays using high-density latch cells. The device includes an array of cells arranged into columns and rows. Each cell comprises a latch cell that includes a transmission gate, a pair of inverters, and an output buffer. Each row of latch cells is connected to at least one common node for addressing the row of latch cells, and each column of latch cells is connected to a particular bit of an input signal and a particular bit of an output signal. A register file may be implemented using one or more arrays of the high-density latch cells to replace any or all of the banks of SRAM cells typically used to implement the register file.

High-density latch arrays

A method and a system are provided for performing address-based memory access assist. An address is received for a memory access and a determination is made, based on the address, that access assist is enabled for at least one storage cell corresponding to the address. The access assist is applied to the at least one storage cell to perform the memory access.

System and method for performing address-based SRAM access assists

A method and a system are provided for performing write assist. Write assist circuitry is initialized and voltage collapse is initiated to reduce a column supply voltage provided to a storage cell. A bitline of the storage cell is boosted to a boosted voltage level that is below a low supply voltage provided to the storage cell and data encoded by the bitline is written to the storage cell.

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Medford, MA, United States of America

Mahmut Ersin Sinangil