Tram, Inc.

Mahmood Reza Kasnavi

Farid Nemati

Robert Homan Igehy

The soft error rate in a semiconductor memory is improved via the use of a circuit and arrangement adapted to use a mirror bit to recover from a soft error. According to an example embodiment of the present invention, a semiconductor device includes first and mirror memory cells configured and arranged to receive and store a same bit in response to a write operation, with the memory cells more susceptible to a bit error in which the stored bit changes from a first state to a second state than to a change from the second state into the first state. The memory cells are separated by a distance that is sufficient to make the likelihood of both memory cells being upset by a same source very low. For a read operation, the bits stored at the fist and second memory cells are compared. If the bits are the same, the bit from the first and/or mirror bit is read out, and if the bits are different, a bit corresponding to the more susceptible state is read out. In this manner, soft errors can be overcome.

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Palo Alto, CA, United States of America

Mahmood Reza Kasnavi