Western Digital Technologies, Inc.

Mahdi Ganji

Yanjie Wang

Yanzhen Wang

Systems and methods for effecting a temperature dependent refresh read rate of a read operation of a block or sub-block of memory cells in a NAND string. The method includes initiating a refresh read cycle, determining a current temperature of the non-volatile memory device, and determining a refresh read rate corresponding to the current temperature. The refresh read is performed. The method further includes implementing a delay of a defined time period after the refresh read is performed, wherein the defined time period is based on the determined refresh read rate. If a new command is received before the delay has ended then the new command is performed, and if the delay has ended without a new command having been received then the method returns to the step of determining the current temperature.

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San Jose, CA, United States of America

Mahdi Ganji