Forskarpatent I Linkoping Ab

Eco Spark Ab

Lightlab Sweden Ab

Magnus Willander

Qiu-Hong Hu

Victor Kouzmine

Yevgeny Mamontov

Quihong Hu

The present invention relates to a light emitting diode (), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires () arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions (), an insulating structure () arranged among the plurality of ZnO-nanowires (), to electrically separate the plurality of p-n junctions (), and a transparent conductive layer (), arranged on the at least one insulating structure () and in electrical contact with the plurality of ZnO-nanowires (), to enable application of a voltage over the plurality of p-n junctions (), thereby enabling emission of light. An advantage with the above light emitting diode () is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires () are used, it is possible to achieve a high brightness.

Light emitting diode and method for manufacturing the same

High forward current gain bipolar transistor

Growing community of inventors

Linköping, Sweden

Magnus Willander