Osram Opto Semiconductors Gmbh

Avago Technologies General IP (singapore) Pte. Ltd.

Osram Opto Semiconductor Gmbh

Magnus Ahlstedt

Matthias Sabathil

Martin Strassburg

Berthold Hahn

Ralph Wirth

Uwe Strauss

Lutz Höppel

Matthias Peter

Johann Ramchen

Robert Walter

Dieter Eissler

Dawid Janse Van Vuuren

Stefan Illek

Tony Albrecht

Reiner Windisch

Johannes Baur

Klaus Streubel

Franz Eberhard

Ulrich Zehnder

Mikael Ahlstedt

Vincent Grolier

Michael Schmal

Ralf Mueller

A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

Optoelectronic semiconductor chip and method for the production thereof

An optical fiber strain sensor system and method are provided that use pre-formed optical structures instead of optical fibers for measuring the strain, or stress, placed on a subject object. The use of pre-formed optical structures in the optical strain gauge system eliminates many of the limitations associated with the use of optical fibers. Because the optical structures are pre-formed structures, they can be made with very tight tolerances to ensure high measurement accuracy and repeatability. The pre-formed structures can be made in low to high volume at low cost and can be made of a variety of materials to ensure that the structures are suitable for use with the material of which the subject object is made. Also, the pre-formed structures can be made very compact while achieving higher sensitivity and exhibiting less optical loss than fiber.

Pre-formed optical meander structures for use in an optical strain gauge system for measuing strain, and a method

A method for producing a radiation-emitting or radiation-receiving semiconductor component is specified. In a method step, a carrier body having a mounting surface is provided. In a further method step, a barrier frame is formed on the mounting surface, in such a way that the barrier frame laterally encloses a mounting region of the mounting surface. In a further method step, a radiation-emitting or radiation-receiving semiconductor chip is mounted within the mounting region on the mounting surface. The semiconductor chip is potted with a liquid lens material, wherein the lens material is applied to the mounting surface within the mounting region. The lens material is cured. The mounting surface, the barrier frame and the lens material are adapted to one another.

Method for producing at least one radiation-emitting and/or -receiving semiconductor component, and semiconductor component

An optical strain gauge, a transfer device for an optical strain gauge, and a test system are described. One instance of the disclosed transfer device includes a first and second gauge coupler that facilitate attachment to an optical strain gauge. The disclosed transfer device enables an optical strain gauge to be easily moved from one location to another; for example from a location of manufacture, testing, or calibration, to an object to be tested with the strain gauge or from one object to another object.

Frame transfer device for an optical strain gauge structure

A semiconductor device includes a radiation-emitting semiconductor chip, a carrier substrate and a film. The carrier substrate has electrically conductive contact tracks on a top side. The film is arranged on a radiation exit side of the chip, the radiation exit side being remote from the carrier substrate, and on the top side of the carrier substrate and has electrically conductive first conductor tracks. The film has perforations arranged such that the semiconductor chip can be electrically contact-connected to the first contact track of the carrier substrate via the first conductor track of the film.

Optoelectronic semiconductor device comprising a semiconductor chip, a carrier substrate and a film

A light emitting diode includes a semiconductor body including an active region that produces radiation, a carrier body fastened to the semiconductor body on an upper side of the semiconductor body, the carrier body including a luminescence conversion material consisting of a ceramic luminescence conversion material, a mirror layer applied to the semiconductor body on an underside of the semiconductor body remote from the upper side, and two contact layers, a first contact layer of the contact layers connected electrically conductively to an n-conducting region of the semiconductor body and a second contact layer of the contact layers connected electrically conductively to a p-conducting region of the semiconductor body.

Light-emitting diode comprising a carrier body, a mirror layer, and two contact layers

A semiconductor light-emitting diode () is proposed having at least one p-doped light-emitting diode layer (), an n-doped light-emitting diode layer () and an optically active zone () between the p-doped light-emitting diode layer () and the n-doped light-emitting diode layer (), having an oxide layer () consisting of a transparent conductive oxide, and having at least one mirror layer (), wherein the oxide layer () is disposed between the light-emitting diode layers () and the at least one mirror layer (), and comprises a first boundary surface () which faces the light-emitting diode layers () and a second boundary surface () which faces the at least one mirror layer (), and wherein the second boundary surface () of the oxide layer () has less roughness (R) than the first boundary surface () of the oxide layer ().

Semiconductor light-emitting diode and method for producing a semiconductor light-emitting diode

A radiation-emitting body comprising a layer sequence, having an active layer () for generating electromagnetic radiation, having a reflection layer (), which reflects the generated radiation, and having at least one intermediate layer () arranged between the active layer () and the reflection layer (). In this case, the active layer () has a roughening on an interface () directed toward the reflection layer (), and the reflection layer () is substantially planar at an interface () directed toward the active layer (). Also disclosed is a method for producing a radiation-emitting body, which involves forming a layer sequence on a substrate having an active layer () for generating electromagnetic radiation. In this case, the method comprises roughening an interface () on the active layer (), and forming at least one intermediate layer () and a reflection layer ().

Radiation emitting body and method for producing a radiation-emitting body

An optoelectronic semiconductor component comprising a semiconductor body () and a current spreading layer () is specified. The current spreading layer () is applied to the semiconductor body () at least in places. In this case, the current spreading layer () contains a metal () that forms a transparent electrically conductive metal oxide () in the current spreading layer, and the concentration (x) of the metal () decreases from that side of the current spreading layer () which faces the semiconductor body () toward that side of said current spreading layer which is remote from the semiconductor body (). A method for producing such a semiconductor component is also disclosed.

Optoelectronic semiconductor component with current spreading layer

An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

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Wuppertal, Germany

Magnus Ahlstedt