Stmicroelectronics (Crolles 2) Sas

Magali Gregoire

Julien Borrel

An interconnection element of an interconnection structure of an integrated circuit is manufactures by a method where a cavity is etched in an insulating layer. A silicon nitride layer is then deposited on walls and a bottom of the cavity. The nitrogen atom concentration in the silicon nitride layer increasing as a distance from an exposed surface of the silicon nitride layer increases. A copper layer is deposited on the silicon nitride layer. The cavity is further filled with copper. A heating process is performed after the deposition of the copper layer, to convert the copper layer and the silicon nitride layer to form a copper silicide layer which has a nitrogen atom concentration gradient corresponding to the gradient of the silicon nitride layer.

Interconnection element and method of manufacturing the same

Atoms are implanted in a semiconductor region at a higher concentration in a peripheral part of the semiconductor region than in a central part of the semiconductor region. A metallic region is then formed to cover the semiconductor region. A heat treatment is the performed to form an intermetallic region from the metallic region and the semiconductor region.

Contacts for electronic component

A NiPt layer with a Pt atom concentration equal to 15% plus or minus 1% is deposited on a semiconductor region (which may, for example, be a source/drain region of a MOS transistor). An anneal is then performed at a temperature of 260&#xb0; C. plus or minus 20&#xb0; C., for a duration in the range from 20 to 60 seconds, in order to produce, from the Nickle-Platinum (NiPt) layer and the semiconductor material of said semiconductor region, an intermetallic layer. Advantageously, the intermetallic layer possesses a structure of heteroepitaxy with the semiconductor material, and includes free Pt atoms.

Intermetallic compound

A method for manufacturing a silicide layer in a hole formed across the entire thickness of a layer of a material deposited on a silicon layer, including: a first step of bombarding of the hole with particles to sputter the silicon at the bottom of the hole and deposit sputtered silicon on lateral walls of the hole; a second step of deposition in the hole of a layer of silicide precursor; a second step of bombarding of the hole with particles to sputter the silicon precursor at the bottom of the hole and deposit sputtered precursor on the internal walls of the hole; a second step of deposition in the hole of a layer of silicide precursor; and an anneal step to form a silicide layer in the hole.

Growing community of inventors

Crolles, France

Magali Gregoire