Infineon Technologies Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Magali Glemet

Heiko Froehlich

Andrey Kravchenko

Vladislav Komenko

Henning Feick

Dirk Offenberg

Boris Binder

A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.

Method for manufacturing a sensor device with a buried deep trench structure and sensor device

A moisture sensor comprises a carrier element comprises an insulating material, a first and a second electrode structure at a distance from one another at the carrier element, a moisture-sensitive, dielectric layer element at a first main surface region of the carrier element and adjacent to the first and second electrode structures and a third electrode structure on a first main surface region of the moisture-sensitive, dielectric layer element, such that the moisture-sensitive, dielectric layer element is between the third electrode structure and the first electrode structure and between the third electrode structure and the second electrode structure. The first electrode structure is a first capacitor electrode and the second electrode structure is a second capacitor electrode of a measurement capacitor for capacitive moisture measurement, wherein the third electrode structure is a floating electrode structure.

Moisture sensor

Growing community of inventors

Dresden, Germany

Magali Glemet