Osram Sylvania Inc.

Osram Opto Semiconductors Gmbh

University of California

Boston University

Osram Oled Gmbh

Osram Gmbh

Madis Raukas

Yi Zheng

Kailash C Mishra

George C Wei

Darshan Kundaliya

Stefan Lange

Matthew Stough

Nathan M Zink

Alan Lenef

Adam Scotch

Norwin Von Malm

Walter Peter Lapatovich

Frank Jermann

Dominik Eisert

Tim Fiedler

Keith A Klinedinst

Krister Bergenek

Bing Han

David J O'Brien

Richard Speer

Daniel Bichler

Angela Eberhardt

Joerg Sorg

David Hamby

Maria J Anc

Alan Piquette

Florian Peskoller

Luca Dal Negro

James A Avallon

Sonja Tragl

Dennis Sprenger

Robert T McSweeney

John F Kelso

Juliane Kechele

Joanne M Browne

Johanna Strube-Knyrim

Zhengbo Yu

Joachim Wirth-Schön

Karl Krister Bergenek

Sean Gorsky

Ran Zhang

Kailash A Mishra

Thomas H Reilly Iii

Kailiah Mishra

Cathy M Shaw Trumble

Bruce Bateman

Jan B Talbot

Jonathan H Tao

Steven Mackel

Jason Montaner

Adam M Scotch

David Johnston

Kalish Mishra

Jonathan Tap

Disclosed herein are a number of dielectric pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic array produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction. The aperiodic array can be formed, attached or placed on a converting material, such as, phosphor, to restrict emission to within the angular cone of extraction. The phosphor could be part of a converting illumination device, such as a phosphor coated light emitting diode, or a laser activated remote phosphor converting device.

Aperiodic nano-optical array for angular shaping of incoherent emissions

A light-emitting device including a light-emitting semiconductor chip having a semiconductor layer sequence having at least one light-emitting semiconductor layer and a light-outcoupling surface, the light-emitting device further including a wavelength conversion layer arranged on the light-outcoupling surface, the wavelength conversion layer including quantum dots.

Light-emitting device with wavelenght conversion layer having quantum dots

Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)SiN:Eu phosphor with a D50 grain size or a D50 particle size that is &#x2265;5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size &#x3c;5 microns. Methods of making such wavelength converters and devices including such wavelength converters are also described.

Stable red ceramic phosphors and technologies including the same

Methods for producing wavelength converters are described. The methods include sintering a mixture consisting essentially of first particles and second particles to form a sintered article. In embodiments the first particles consist essentially of particles of &#x3b2;-SiAlON or precursors thereof, and the second particles consist essentially one or more sintering aids or precursors thereof. In embodiments the sintered article has a density that is greater than or equal to about 90% of a theoretical bulk density of the mixture, and is configured to convert primary light incident thereon to secondary light, wherein the secondary light exhibits a peak with a full width half maximum of greater than 0 to about 60 nanometers (nm) within a wavelength range of about 495 nm to about 600 nm.

&#x3b2;-SiAlON wavelength converters and methods of making the same

A radiation-emitting component comprising a ceramic material, comprising a garnet having the composition represented by the formula A3-xB5O12:Dx and a barium-containing oxide. In the garnet A3-xB5O12:Dx, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0&#x2264;x&#x2264;2.

Garnet material, method for its manufacturing and radiation-emitting component comprising the garnet material

A material, comprising a garnet having the composition represented by the formula ABO:Dand a barium-containing oxide. In the garnet ABO:D, A is selected from lutetium, yttrium, gadolinium, terbium, scandium, another rare earth metal or mixtures thereof. B is selected from aluminum, scandium, gallium, indium, boron or mixtures thereof. D is at least one dopant selected from chromium, manganese and rare earth metals, particularly cerium, praseodymium or gadolinium. The dopant is present with x is 0&#x2266;x&#x2266;2.

A wavelength converter for an LED is described that comprises a substrate of monocrystalline garnet having a cubic crystal structure, a first lattice parameter and an oriented crystal face. An epitaxial layer is formed directly on the oriented crystal face of the substrate. The layer is comprised of a monocrystalline garnet phosphor having a cubic crystal structure and a second lattice parameter that is different from the first lattice parameter wherein the difference between the first lattice parameter and the second lattice parameter results in a lattice mismatch within a range of &#xb1;15%. The strain induced in the phosphor layer by the lattice mismatch shifts the emission of the phosphor to longer wavelengths when a tensile strain is induced and to shorter wavelengths when a compressive strain is induced. Preferably, the wavelength converter is mounted on the light emitting surface of a blue LED to produce an LED light source.

Wavelength converter for an LED and LED containing same

A wavelength-conversion plate is described herein. The wavelength conversion plate may include a converter of a first ceramic material and a reflector of a second ceramic material. The first ceramic material converts the primary light emitted by a light source such as a light emitting diode (LED) into a secondary light and the second ceramic material reflects the secondary light emitted by said converter. Preferably, the converter is inlaid into the reflector so that the reflector surrounds an outer edge of the converter. Such a configuration has an advantage of reducing unwanted side emissions from the converter.

Ceramic wavelength-conversion plates and light sources including the same

A wavelength-converting structure for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting structure includes a thin film structure having a non-uniform top surface. The non-uniform top surface is configured increase extraction of light from the top surface of a wavelength-converting structure.

LED wavelength-converting structure including a thin film structure

There is herein described an LED light source comprising an LED and a ceramic wavelength converter positioned to receive at least a portion of the light emitted by said LED, said ceramic wavelength converter converting at least a portion of the light emitted by said LED into light of a different wavelength, said ceramic wavelength converter comprising a chlorosilicate phosphor and having a density at least about 90% of theoretical density. The chlorosilicate phosphor is preferably a green-emitting CaMg(SiO)Cl:Euphosphor.

Ceramic wavelength converter and LED light source containing same

A light-emitting semiconductor chip is provided, the semiconductor chip comprising a semiconductor body having a pixel region with at least two electrically isolated sub-regions, each sub-region comprising an active layer, which generates electromagnetic radiation of a first wavelength range during operation, a separately manufactured ceramic conversion die over a radiation emission area of at least one sub-region, said conversion die being configured to convert radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, wherein a width of the conversion die does not exceed 100 &#x3bc;m. Further, a method for the production of a light-emitting semiconductor chip and method for the production of a conversion die are provided.

Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip

A method of applying a phosphor coating is described. The method comprises forming a suspension of a phosphor and a polymer binder dissolved in a solvent, the phosphor comprising at least one of a nitridosilicate or an oxonitridosilicate phosphor, the polymer binder being capable of decomposing thermally; applying the suspension to a substrate to form a coating; drying the coating; and baking the coating in an inert atmosphere to thermally decompose the polymer binder to form the phosphor coating, preferably at a temperature less than about 400&#xb0; C. in a nitrogen atmosphere. A preferred polymer binder is polyisobutyl methacrylate

Method of applying phosphor coatings

A wavelength-converting plate for a wavelength-converted light emitting diode (LED) assembly. The wavelength-converting plate includes microlenses deposited thereon. The microlenses may have an index of refraction different from the index of refraction of the wavelength-converting plate. The microlenses on the top surface of the plate increase lumen output in a direction normal to the top surface of a wavelength-converting plate.

LED wavelength-converting plate with microlenses

Rare earth-activated aluminum nitride powders are made using a solution-based approach to form a mixed hydroxide of aluminum and a rare earth metal, the mixed hydroxide is then converted into an ammonium metal fluoride, preferably a rare earth-substituted ammonium aluminum hexafluoride ((NH)AlREF), and finally the rare earth-activated aluminum nitride is formed by ammonolysis of the ammonium metal fluoride at a high temperature. The use of a fluoride precursor in this process avoids sources of oxygen during the final ammonolysis step which is a major source of defects in the powder synthesis of nitrides. Also, because the aluminum nitride is formed from a mixed hydroxide co-precipitate, the distribution of the dopants in the powder is substantially homogeneous in each particle.

Rare earth-activated aluminum nitride powders and method of making

White-light efficiency from a light emitting diode is enhanced by recycling inwardly penetrating light outwardly by application of a multi-layer, thin film filter between the LED die and the phosphor layer. This procedure increases the package extraction efficiency.

Enhanced emission from pc-LEDs using IF filters

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Charlestown, MA, United States of America

Madis Raukas