Globalfoundries Singapore Pte. Ltd.

Madhu Sudan Mukhopadhyay

Young Way Teh

Bin Zhu

Subramanian Sundareswara

Structures for a memory device and methods of forming a structure for a memory device. The structure includes a first and second source/drain regions in a semiconductor substrate, a first gate stack on the semiconductor substrate, and a second gate stack on the semiconductor substrate adjacent to the first gate stack. The first and second gate stacks are positioned in a lateral direction between the first source/drain region and the second source/drain region. The first gate stack includes first and second gate electrodes, and the first gate electrode includes segments spaced apart along a longitudinal axis of the first gate stack.

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Singapore, Singapore

Madhu Sudan Mukhopadhyay