Hewlett-packard Development Company, L.p.

Compaq Computer Corporation, Inc.

Madhav Desai

Nevine Nassif

James Arthur Farrell

Nicholas Lee Rethman

Harry Ray Fair, Iii

Roy Badeau

Dale Hayward Hall

The present invention relates to a method and apparatus for determining capacitances and charge models for MOS devices to be used in calculating delays in a timing verifier for a circuit. The models are generated by first creating a variety of configurations of MOS devices which vary the inputs to the source, drain, and gate. Such inputs may include rising and falling values as well as constant values at VDD and VSS. Simulations are run on all of the configurations using conditions anticipated for the circuit to be analyzed. Capacitance values obtained from the simulations are used to determine models based upon length and width of the MOS devices using standard curve fitting techniques. Models then can be used for determining delays within the circuit.

Timing verifier for MOS devices and related method

A system for rapidly accurate Elmore delays is disclosed which uses circuit simulations with different circuit configurations to generate Elmore delay models. From data generated by the simulations, Elmore delays are represented as functions of a capacitance charge and device width for a variety of device configurations. Similarly, accurate capacitance models are determined for each device. To determine an Elmore delay for a discharge path, the appropriate models are applied to each device and summed together. Within a timing verifier, the present invention can rapidly determine critical paths which require additional consideration.

Method and apparatus for estimating elmore delays within circuit designs

The present invention relates to a method and apparatus for determining capacitance and charge models for MOS devices to be used in calculating delays in a timing verifier for a circuit. The models are generated by first creating a variety of configurations of MOS devices which vary the inputs to the source, drain, and gate. Such inputs may include rising and falling values as well as constant values at VDD and VSS. Simulations are run on all of the configurations using conditions anticipated for the circuit to be analyzed. Capacitance values obtained from the simulations are used to determine models based upon length and width of the MOS devices using standard curve fitting techniques. Models then can be used for determining delays within the circuit.

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Mumbai, India

Madhav Desai