Koninklijke Philips Corporation N.v.

Madelon Gertruda Josephina Rovers

Dirk Maarten Knotter

Johannes Van Wingerden

The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate with a layer of silicon thereon, an inorganic anti-reflective layer applied to the layer of silicon, and a resist mask applied to the inorganic anti-reflective layer, which method comprises the steps of:

Method of wet etching an inorganic antireflection layer

The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100&#xb0; C.

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Eindhoven, Netherlands

Madelon Gertruda Josephina Rovers