France Telecom Establissement Autonome De Droit Public

Madeleine Bonnel

Yannick Chouan

A process for the production of thin film transistor with a double gate and an optical mask consisting of depositing a conductive source and drain layer on an insulating substrate (31), producing photosensitive resin patterns fixing the location of the source and drain (34), etching the conductive layer, depositing on the structure obtained an opaque metal layer for forming the lower gate (42), carrying out thermal contraction of the resin patterns, depositing in isotropic manner a preferably a-C:H layer (39), dissolving the resin patterns, depositing a semiconductor layer (44), an insulating layer (45) and then a conductive layer (46) for producing the upper gate of the transistor and photoetching the stack formed by the conductive layer, the semiconducting layer and the insulating layer in order to fix the transistor dimensions and passivate the structure obtained with an electrical insulant (48).

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St Quay Perros, France

Madeleine Bonnel