Advanced Technology Materials, Inc.

Entegris, Inc.

Other

Mackenzie E King

Thomas H Baum

Jeffrey F Roeder

Glenn M Tom

Joseph D Sweeney

Frank DiMeo, Jr

Philip S H Chen

Ing-Shin Barry Chen

Jeffrey W Neuner

James J Welch

Jianwen Han

Karl E Boggs

Jun Liu

Michael S Darsillo

Michele Stawasz

Michael B Korzenski

Peter Wrschka

Pamela M Visintin

David Daniel Bernhard

Michael J Wodjenski

Ping Jiang

Steven M Lurcott

Jay J Jung

Troy B Scoggins

Rex Gerald Sheppard

Brian Bobita

Richard Bhella

Weihua Wang

Cory Schomburg

Monica K Hilgarth

Michele Stawacz

Thomas Chatterton

John Staples

Yuriy V Tolmachev

James V Mcmanus

Frank Dimeo

Joseph Marzullo

Donald J Carruthers

A carbon material is described, having utility for fabricating an electrode of an electrochemical energy device, wherein the carbon material includes a particulate carbon having a particle size din a range of from 1 to 15 &#x3bc;m, a bulk density in a range of from 0.3 g/cc to 1.2 g/cc, a surface area as measured by nitrogen BET surface area determination at 25&#xb0; C. that does not exceed 10 m/g, and an impurity content of less than 3000 ppm by weight, based on weight of the carbon material. Such carbon material may be utilized in amorphous or graphitic form in an electrode of an electrochemical energy device, such as a negative electrode of a lithium-ion battery or a lithium-ion hybrid capacitor.

Carbon electrode and lithium ion hybrid capacitor comprising same

A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon

A method of passivating a CMP composition by dilution and determining the relationship between the extent of dilution and the static etch rate of copper. Such relationship may be used to control the CMP composition during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface.

Method of passivating chemical mechanical polishing compositions for copper film planarization processes

A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Apparatus and process for sensing fluoro species in semiconductor processing systems

The present invention relates in general to real-time analysis of electrochemical deposition (ECD) metal plating solutions, for the purpose of reducing plating defects and achieving high quality metal deposition. The present invention provides various new electrochemical analytical cell designs for reducing cross-contamination and increasing analytical signal strength. The present invention also provides improved plating protocols for increasing potential signal strength and reducing the time required for each measurement cycle. Further, the present invention provides new methods and algorithms for simultaneously determining concentrations of suppressor, accelerator, and leveler in a sample ECD solution within three experimental runs. A particularly preferred embodiment of the present invention provides a method for simultaneously determining concentrations of all three organic additives within a single experimental run by using a single analytical cell, while interactions between such additives are properly accounted for.

Methods and apparatuses for monitoring organic additives in electrochemical deposition solutions

The present invention relates to a method and apparatus for determining organic additive concentrations in a sample electrolytic solution, preferably a copper electroplating solution, by measuring the double layer capacitance of a measuring electrode in such sample solution. Specifically, the present invention utilizes the correlation between double layer capacitance and the organic additive concentration for concentration mapping, based on the double layer capacitance measured for the sample electrolytic solution.

Methods for determining organic component concentrations in an electrolytic solution

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions in the CMP composition and at the copper/CMP composition interface during CMP processing.

Passivative chemical mechanical polishing composition for copper film planarization

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

A composition comprising a magnesium halide coated macroporous carbonaceous substrate is provided for effecting moisture removal from a hydrogen halide fluid. Moisture removal is effected by intimately contacting the hydrogen halide fluid with the magnesium halide coated macroporous carbonaceous substrate and separating the fluid from the coated substrate.

Methods for removing moisture from hydrogen halides

A method and system for analysis of additives in electrolysis plating solutions, using a flow management system that minimizes loss of plating solutions and decreases sampling time. The system includes at least one analysis chamber, a sampling duct connected to processing tool, a four-way valve positioned between the processing tool and the sampling duct, at least one carrier fluid duct connected to the analysis chamber, at least one actuatable multi-port valve that provides a transference platform between the sampling duct and the at least one carrier fluid duct, and a flow sensor connected to the sampling duct and positioned downstream from the at least one actuatable multi-port valve.

Sampling management for a process analysis tool to minimize sample usage and decrease sampling time

The present invention relates to a method for mathematically re-calibrating and adjusting an initial concentration analysis model that suffers from electrochemical measurement errors caused by surface state changes in the working/counter/reference electrode after extended usage. Specifically, such recalibration method reimburses long-term drift in the electrochemical measurements based on a single point testing.

One-point recalibration method for reducing error in concentration measurements for an electrolytic solution

The present invention relates to a process analyzer for analyzing composition of sample electrochemical deposition solutions, comprising at least one microelectrode having a radius of not more than about 5 &#x3bc;m. The process analyzer preferably comprises: (1) two or more independent analytical modules for analyzing fluid samples, (2) a primary manifold communicatively connected to the analytical modules for introducing fluid samples thereinto, and (3) a computational device communicatively associated with the analytical modules for colleting and processing analytical data therefrom, and therefore can be used to conduct automatic and simultaneous analysis of two or more sample solutions.

Process analyzer for monitoring electrochemical deposition solutions

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Newtown, CT, United States of America

Mackenzie E King