Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Other

Huizhou China Star Optoelectronics Display Co., Ltd.

Macai Lu

Jiangbo Yao

Nian Liu

Minggang Liu

Wei Zhang

Yong Fan

Chuanbao Luo

Chiayu Lee

Lei Wei

Jun Hou

Chunche Hsu

Lei Wen

Shijian Qin

Xueru Mei

Shuli Zhao

A manufacturing method of an array substrate, the array substrate, and a display panel are provided. In the manufacturing method of the array substrate, by forming an oxide material layer including aluminum atoms on a gate electrode metal layer, and by heating the oxide material layer to allow the aluminum atoms to capture oxygen in the oxide semiconductor layer, an aluminium oxide is formed, and by making the oxide in the oxide semiconductor layer to lose oxygen to become conductive, a source electrode region and a drain electrode of a thin film transistor are formed.

Manufacturing method of array substrate, array substrate, and display panel

A display panel and a manufacturing method are provided. The display panel includes a substrate, a source/drain layer, a light shielding layer, a dielectric layer disposed on the substrate and covering the light shielding layer and the source/drain layer, and an oxide semiconductor layer disposed on the dielectric layer. The oxide semiconductor layer is connected to the source/drain layer and the light shielding layer through a first hole and a second hole, respectively. A metal layer is etched to form the source/drain layer and the light shielding layer simultaneously. The dielectric layer arranged on the substrate covers the light shielding layer and the source/drain layer. The dielectric layer functions as an isolating layer, which reduces the number of oxide TFT layers of the display panel, simplifying the film structure of the display panel, reducing the processes and masks required for production, thereby increasing production efficiency and reducing production costs.

Display panel and method of manufacturing the same

A display panel and a manufacturing method are provided. The present disclosure can reduce process steps of the display panel by disposing a first source electrode and a first drain electrode of a low temperature polysilicon thin film transistor and a second source electrode and a second drain electrode of an oxide thin film transistor in a same layer. Therefore, stability of the oxide thin film transistor can be improved, a channel length of the oxide thin film transistor can be shortened correspondingly, resolution of the display panel can be improved, and a thickness of the display panel can be reduced.

Display panel and manufacturing method thereof

An array substrate, a manufacturing method thereof, and a display panel are provided. By disposing first electrodes and second electrodes on top and bottom sides of an active layer, respectively, and disposing a part of each gate electrode among sub-active patterns, the array substrate is formed with vertical-structured thin film transistors. Therefore, a channel resistance can be reduced, and a channel width of the thin film transistors can be reduced, thereby reducing an area of the thin film transistors, reducing impedance of the thin film transistors, and reducing power consumption of the display panel.

Array substrate, manufacturing method thereof, and display panel

An array substrate and a manufacturing method thereof are provided. The array substrate includes a substrate, an active layer, a first insulating layer, a first metal layer, a second insulating layer, and a second metal layer. The array substrate includes a thin film transistor (TFT) area, and the second metal layer includes a source-drain metal sub-layer located in the TFT area. The TFT area is defined with an active layer exposed area. The array substrate includes a barrier layer, and an orthographic projection of the barrier layer on the active layer at least partially covers an orthographic projection of the active layer exposed area on the active layer.

Array substrate and manufacturing method thereof

An embodiment of the application discloses a panel and a manufacturing method thereof. In the panel, a thin-film transistor layer, a first conductive layer, a light-emitting diode (LED), and a second conductive layer are sequentially disposed on a substrate. The LED includes a first end and a second end. The first end is disposed on the first electrode. The second end is disposed on the second electrode. The second conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is electrically connected to the first end and the first electrode. The second conductive portion is electrically connected to the second end and the second electrode.

Panel and manufacturing method thereof

The present invention discloses a micro light emitting diode display substrate and a manufacturing method thereof. The substrate includes an underlay substrate, a thin film transistor and a micro light emitting diode disposed on a top surface of the underlay substrate and connected to each other, a first metal film layer disposed on a bottom surface of the underlay substrate and at least formed with fanout circuit pattern and a side printed bonding pad. The fanout circuit pattern is connected to the side printed bonding pad, the side printed bonding pad is connected to the thin film transistor through a side wire such that after the display substrate is assembled with a bezel, a top surface display pixel region can maximally approach the bezel, to achieve bezel-less effect.

Micro light emitting diode display substrate and manufacturing method thereof

The present application provides a display panel, a manufacturing method thereof, and a display device. The present application adopts a molybdenum/copper stackup to form a solder pad for bonding, which can effectively solve a problem of a poor bonding force between MTD and a soldering material in the prior art. Meanwhile, a bonding lead is made of titanium-molybdenum-nickel alloy/copper/titanium-molybdenum-nickel alloy stackup, which can reduce manufacturing processes of the display panel and reduce manufacturing costs.

Display panel, manufacturing method thereof, and display device

A display substrate is provided. The display substrate includes a substrate layer. A functional layer is disposed on the substrate layer, and a first positioning layer is disposed on the functional layer. A constituent material of the first positioning layer includes a magnetic material. The provided display substrate utilizes a novel magnetic positioning function layer structure, so that it can self-align with the other functional layer structure disposed on the magnetic positioning layer structure, thereby improving an alignment precision between the two structures, and reducing a repair cost which may be caused due to insufficient alignment precision. At the same time, a self-alignment process also simplifies the corresponding alignment operation.

Display substrate, method for manufacturing same, and display device thereof

The present disclosure provides an array substrate and a manufacturing method thereof, and a display panel. In the array substrate, a functional layer disposed between an active layer and a gate insulating layer protects the active layer during etching of the active layer, which prevents the active layer from damage and conducts a source/drain layer and the active layer, so that transistors in the array substrate work normally, solving the technical problem that current display panels damage the active layer during a preparation process, which causes performance of thin film transistors to decrease.

Array substrate and manufacturing method thereof, and display panel

A manufacturing method of a thin film transistor substrate and a thin film transistor substrate are provided. In the manufacturing method of the thin film transistor substrate, a buffer layer, a metal oxide semiconductor layer, and a first insulating layer are sequentially deposited on a substrate, and then the first insulating layer and the metal oxide semiconductor layer are patterned according to a pattern of an active layer. The metal oxide semiconductor layer forms the active layer. A second insulating layer and a gate metal layer are then sequentially deposited. The first insulating layer and the second insulating layer together form a gate insulating layer. The first insulating layer can be used to protect the metal oxide semiconductor layer, such that defects on a contact surface between the active layer and the gate insulating layer are reduced, thereby improving the stability of a device.

Manufacturing method of thin film transistor substrate and thin film transistor substrate

The disclosure provides a display panel and a manufacturing method thereof. The method includes: forming a main gate and a sub-gate on a glass substrate, wherein at least a portion of the sub-gate includes a light transmissive area; sequentially forming a gate insulating layer, a semiconductor layer, and a second metal layer on the sub-gate, patterning the semiconductor layer to obtain a main active layer and a sub-active layer, and patterning the second metal layer to obtain a main source/drain and a sub-source/drain.

The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.

Micro light emitting diode display panel, method for fabricating same, and display device

A display device and a method of manufacturing thereof are provided. A display device includes an array substrate and a pixel electrode disposed on the array substrate. The pixel electrode includes a soldering region, a non-soldering region, a transparent conductive oxide layer formed on the array substrate, a first metal electrode layer disposed on the transparent conductive oxide layer of the soldering region and the non-soldering region, a second metal protective layer disposed on the first metal electrode layer of the non-soldering region, and a micro LED chip including a pin correspondingly soldered on the first metal electrode layer of the soldering region. The metal electrode layer easily reacted with the organic solvent or the organic film to cause residue or defects can be improved, and the first metal electrode layer is merely retained to provide a solder joint for soldering the micro LED chip without affecting subsequent processes.

Display device and method of manufacturing thereof

A photosensitive device comprising a first oxide thin film transistor and a second oxide thin film transistor. Wherein, a drain of the first oxide thin film transistor is electrically connected to a gate of the second oxide thin film transistor. The photosensitive device according to the present application adopts oxide thin film transistors arranged in a plurality of layers, which greatly improves the response amplitude to ambient light and breaks through the limitations of the single thin film transistor's low light response which makes it impossible to be used as a visible light detecting component. Therefore, the photosensitive device according to the present application can realize detection of ambient light and can expand the scope in which it can be applied.

Growing community of inventors

Shenzhen, China

Macai Lu