Asm IP Holding B.v.

Asm International N.v.

Imec Vzw

Asm America, Inc.

Maarten Stokhof

Bert Jongbloed

Dieter Pierreux

Werner Knaepen

Hessel Sprey

Steven R A Van Aerde

Kelly Houben

Jan Willem Maes

Hideaki Fukuda

Juhana Kostamo

Roel Gronheid

Hari Pathangi Sriraman

Tatsuya Yoshimi

Noureddine Adjeroud

Nathanael R C Kemeling

Devendra Kumar

Kamal Kishore Goundar

A method of forming a directed self-assembled (DSA) layer on a substrate by: providing a substrate; applying a layer comprising a self-assembly material on the substrate; and annealing of the self-assembly material of the layer to form a directed self-assembled layer by providing a controlled temperature and gas environment around the substrate. The controlled gas environment comprises molecules comprising an oxygen element with a partial pressure between 10-2000 Pa.

Method of forming a directed self-assembled layer on a substrate

Amorphous silicon-filled gaps may be formed having no or a low occurrence of voids in the amorphous silicon fill, while maintaining a smooth exposed silicon surface. A gap in a substrate may be filled with amorphous silicon by heating the substrate to a deposition temperature between 300 and 500&#xb0; C. and providing a feed gas that comprises a first silicon reactant to deposit an amorphous silicon film into the gap with an hydrogen concentration between 0.1 and 10 at. %. The deposited silicon film may subsequently be annealed. After the anneal, any voids may be reduced in size and this reduction in size may occur to such an extent that the voids may be eliminated.

Semiconductor device with amorphous silicon filled gaps and methods for forming

The invention relates to a method of forming a semiconductor device by patterning a substrate by providing an amorphous silicon layer on the substrate and forming a hard mask layer on the amorphous silicon layer. The amorphous silicon layer is provided with an anti-crystallization dopant to keep the layer amorphous at increased temperatures (relative to not providing the anti-crystallization dopant). The hard mask layer may comprise silicon and nitrogen.

Forming semiconductor device by providing an amorphous silicon core with a hard mask layer

Method of depositing a film having a substantially uniform thickness by means of chemical vapor deposition, comprising:

Method of CVD-depositing a film having a substantially uniform film thickness

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Preferred embodiments are directed to providing conformal lining over openings formed in porous materials. Trenches are formed in, preferably, insulating layers. The layers are then adequately treated with a particular plasma process. Following this plasma treatment a self-limiting, self-saturating atomic layer deposition (ALD) reaction can occur without significantly filling the pores forming improved interconnects.

Plasma pre-treating surfaces for atomic layer deposition

A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a gaseous inorganic reducing agent, thereby forming a metal layer. In preferred arrangements, the reducing agent comprises of thermal hydrogen (H), hydrogen radicals (H*) and/or carbon monoxide (CO).

Method of growing electrical conductors

Growing community of inventors

Winksele, Belgium

Maarten Stokhof