Imec

Katholieke Universiteit Leuven

Katholieke Universiteit Leuven, Ku Leuven R&d

Interuniversitair Microelektronica Centrum (imec)

Imec Vzw

Maarten Leys

Stefan Degroote

Joff Derluyn

Kai Cheng

Marianne Germain

Gang Wang

Matty Caymax

Niamh Waldron

Wei-e Wang

Methods of manufacturing a III-V compound semiconductor material, and the semiconductor material thus manufactured, are disclosed. In one embodiment, the method comprises providing a substrate comprising a first semiconductor material having a {001} orientation and an insulating layer overlaying the first semiconductor material. The insulating layer comprises a recessed region exposing an exposed region of the first semiconductor material. The method further comprises forming a buffer layer overlaying the exposed region that comprises a group IV semiconductor material. The method further comprises thermally annealing the substrate and the buffer layer, thereby roughening the buffer layer to create a rounded, double-stepped surface having a step density and a step height. A product of the step density and the step height is greater than or equal to 0.05 on the surface. The method further comprises at least partially filling the recessed region with a III-V compound semiconductor material overlaying the surface.

Antiphase domain boundary-free III-V compound semiconductor material on semiconductor substrate and method for manufacturing thereof

Semiconductor process technology and devices are provided, including a method for forming a high quality group III nitride layer on a silicon substrate and to a device obtainable therefrom. According to the method, a pre-dosing step is applied to a silicon substrate, wherein the substrate is exposed to at least 0.01 &#x3bc;mol/cmof one or more organometallic compounds containing Al, in a flow of less than 5 &#x3bc;mol/min. The preferred embodiments are equally related to the semiconductor structure obtained by the method, and to a device comprising said structure.

Method for forming a group III nitride material on a silicon substrate

The present invention recites a new method for manufacturing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET devices or MESFET devices, grown by Metal-Organic Vapor Phase Expitaxy, with higher performance (power), by covering the surface with a thin SiN layer on the top AlGaN layer, in the reactor where the growth takes place at high temperature, prior cooling down the structure and loading the sample out of the reactor, as well as a method to produce some HEMT transistors on those heterostructures, by depositing the contact on the surface without any removal of the SiN layer by MOCVD. The present invention recites also a device.

AlGaN/GaN high electron mobility transistor devices

Growing community of inventors

Eindhoven, Netherlands

Maarten Leys