Katholieke Universiteit Leuven

Imec Vzw

Imec

Maarten Debucquoy

Paul Heremans

Jef Poortmans

Stijn Verlaak

Maria Jesus Recaman Payo

Jinyoun Cho

A method includes depositing a first layer including amorphous silicon on a surface of a substrate; depositing a second layer including metal on the first layer; and performing an annealing process at a temperature within a range of 70&#xb0; C. to 200&#xb0; C., thereby inducing a silicidation reaction between the first layer and the second layer and forming a third layer comprising a metal silicide in electrical contact with the substrate, resulting in a remaining part of the first layer being between the substrate and the third layer.

Method for forming a passivating electrical contact on a crystalline semiconductor substrate and device comprising such contact

An organic photo-detecting field-effect device is presented, the device comprising a first layer comprising an organic semi-conducting material, the first layer acting as an accumulation layer and as a charge transport layer for a first type of charge carriers, and a second layer comprising a second material, the second layer acting as a an accumulation layer for a second type of charge carriers. Charges collected in the second layer influence the charge transport in the first layer. The second material may be an organic semi-conducting material or a metal. At the interface between the first layer and the second layer a heterojunction is formed in the case of an organic semi-conducting second material, and a Schottky barrier is formed in the case of a metal second material, giving rise to an efficient exciton splitting. Different geometries and operation modes facilitating the removal of the collected photo-generated charge carriers during the reset period of the device are presented. Furthermore, a method for operating an organic photo-detecting field-effect device is provided.

Organic semi-conductor photo-detecting device

Growing community of inventors

Kessel-lo, Belgium

Maarten Debucquoy