Honeywell G.m.b.h.

M Walter Scott

Joseph L Schmit

Robert J Hager

Ernest L Stelzer

Eric S Johnson

Robert G Johnson

R Andrew Wood

Mona M Abdelrahman

Darryl Lyle Smith

David K Arch

Ralph W Fuchs

James O Holman

Leonard R Weisberg

An improved electromagnetic radiation-sensitive semiconductor device together with a method of making same is disclosed in which surface regions directly beneath the active portion of the electrical contacts are provided with a layer of semiconductor material having a higher bandgap than the radiation sensitive material which repels minority carriers but allows the passage of majority carriers. Because the rate of annihilation of minority carriers at the contact to which they are attracted is reduced, the responsivity of the detector is greatly enhanced.

Electromagnetic radiation detectors

A permalloy thin film temperature sensing element in which the NiFe film material is deposited on a substrate in very narrow lines less than about 15 .mu.m wide and in film thicknesses in excess of about 400A.degree. preferably in the range of 1600.degree.-3200A.degree..

Ni-fe thin-film temperature sensor

A method of growing single crystals of silicon doped with thallium for use as an extrinsic silicon photodetector of 3-5 um infrared radiation which will operate above 77 K.

Growth of thallium-doped silicon from a tin-thallium solution

Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

Ohmic contacts to p-type mercury cadmium telluride

The stoichiometry and free-carrier concentration of mercury cadmium telluride is adjusted by a heat treatment. Mercury cadmium telluride is heat treated in the presence of mercury and cadmium vapor.

Mercury cadmium telluride annealing procedure

Compositional gradients in a body of mercury cadmium telluride are removed by heat treating the mercury cadmium telluride in a closed container at a temperature which is less than the solidus temperature. The constituent vapor pressure within the closed container is maintained at a value which is lower than the equivalent vapor pressure of the constituents of the mercury cadmium telluride body.

Growing community of inventors

Minnetonka, MN, United States of America

M Walter Scott