University of Arkansas

M Shahidul Haque

William David Brown

Hameed A Naseem

A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1&#xd7;10dopant atoms per cmof silicon.

Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells

A low temperature process for forming a metal doped silicon layer in which a silicon layer is deposited onto a substrate at low temperatures, with a metal doping layer then deposited upon the silicon layer. This structure is then annealed at low temperatures to form a metal doped semiconductor having greater than about 1&times;10 dopant atoms per cm of silicon.

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Fayetteville, AR, United States of America

M Shahidul Haque