Axt, Inc.

M Hani Badawi

Weiguo Liu

Morris Young

Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.

Low etch pit density (EPD) semi-insulating III-V wafers

A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.

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Santa Clara, CA, United States of America

M Hani Badawi