Texas Instruments Corporation

M Ali Khatibzadeh

Louis N Hutter

John P Erdeljac

John Kenneth Arch

Burhan Bayraktaroglu

Wiliam U Liu

A thick layer of copper is formed on the outside the protective overcoat (PO) which protects an integrated circuit, and forms both an inductor and the upper electrode of a capacitor. Placing this layer outside the PO greatly reduces parasitic capacitances with the substrate in the devices.

Metalization outside protective overcoat for improved capacitors and inductors

Metallization outside protective overcoat for improved capacitors and inductors

In one form of the invention, a circuit is disclosed, the circuit comprising: a transistor Q having an input terminal 14 with an avalanche breakdown voltage to electrical ground; and one or more diodes 16 arranged in a series between the input terminal 14 and electrical ground, the diode series 16 having a forward-biased voltage drop that is smaller than the avalanche breakdown voltage.

Noise performance of amplifiers

Generally, and in one form of the invention a semiconductor device is presented comprising: a transistor comprising an emitter finger and a base finger; and a ballast impedance connected to the base finger. Other devices and methods are also disclosed.

Base ballasting

A monolithically realizable radio frequency (RF) bias choke implemented as a parallel inductor/capacitor arrangement connected between a DC supply node and an RF circuit bias point.

Monolithically realizable radio frequency bias choke

A monolithically realizable harmonic trapping circuit that is a shunt connected series-resonant inductor-capacitor combination which has a resonant frequency designed to coincide with an undesired harmonic frequency of a desired fundamental frequency signal.

Growing community of inventors

Plano, TX, United States of America

M Ali Khatibzadeh