Motorola Corporation

Lynnita K Knoch

Gordon Tam

Pak M Tam

A vertical IGFET configuration includes a stripe arrangement having a non-linear shape. In one example, a stripe arrangement (30) has contact cut-out portions (41) and elongated portions (42). The elongated portions (42) have a width (44) that less than the width (43) of the contact cut-out portions (41). The stripe arrangement (30) increases channel density compared to typical individual cell configurations (10) and straight stripe configurations (20) thereby lowering on-resistance.

Vertical IGFET configuration having low on-resistance and method

A heterojunction bipolar transistor having a thin, lightly doped, silicon emitter disposed on a silicon-germanium base layer exhibits low emitter resistance and low emitter-base capacitance. The lightly doped silicon emitter maintains the bandgap differential between silicon-germanium and silicon. The silicon emitter is fabricated such that the silicon emitter will be substantially depleted at zero bias, resulting in low emitter-base resistance and emitter resistance.

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Chandler, AZ, United States of America

Lynnita K Knoch