Dow Global Technolgoies LLC

The Dow Chemical Company

Lynne K Mills

Paul H Townsend, Iii

Kevin E Howard

Joost J M Waeterloos

Sheila Gombar-Fetner

Stephen F Hahn

Gene D Rose

Paul Joseph Popa

Deidre A Strand

Larry R Wilson

Edward Otto Shaffer, Ii

Kenneth L Foster

Arne K Knudsen

Jack E Hetzner

Richard J Strittmatter

Theresa A Guiton

Eric J Swedberg

JoLee M Dominowski

Edward O Ii Shaffer

Paul H Iii Townsend

The invention relates to silsesquioxane-titania hybrid polymers, wherein the titania domain size is less than about five nanometers. Such polymers are useful, for example, to form anti-reflection coatings in the fabrication of microelectronic devices.

Silsequioxane-titania hybrid polymers

This invention is directed to a method of making a composition in which a silane having an unsaturated group and a silane having an aromatic group are hydrolyzed. In this method the more highly reactive silane is continuously added during the hydrolysis reaction of the less reactive silane. The composition can be used in the fabrication of microelectronic devices, particularly as hardmasks or etchstops.

Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices

This invention is a method comprising providing a substrate, forming a first layer on the substrate, wherein the first layer has a dielectric constant of less than 3.0 and comprises an organic polymer, applying an organosilicate resin over the first layer, removing a portion of the organosilicate resin to expose a portion of the first layer, and removing the exposed portions of the first layer. The invention is also an integrated circuit article comprising an active substrate containing transistors and an electrical interconnect structure containing a pattern of metal lines separated, at least partially, by layers or regions of an organic polymeric material having a dielectric constant of less than 3.0 and further comprising a layer of an organosilicate resin above at least one layer of the organic polymer material.

This invention relates to a method of dual damascene integration for manufacture of integrating circuits using three top hard mask layers having alternating etch selectivity characteristics.

Tri-layer masking architecture for patterning dual damascene interconnects

This invention is a composition comprising (a) an oligomer or polymer dispersible in an organic solvent, having a low dielectric constant, or being curable to form a material having a low dielectric constant, (b) at least one organic solvent and (c) less than 1000 parts by weight of a polymeric coating additive per million parts by weight of total composition (ppm). The polymeric additive is characterized in that it is miscible with component (a) and the solvent system but becomes incompatible with the mixture of component (a) and solvent during the coating process.

Spin-on-dielectric compositions with coating enhancer

A filler powder comprised of an alumina powder coated with a silicon containing coating, wherein the silicon containing coating at most partially covers the surface of said coated alumina powder and the filler powder, when mixed with a thermosetting epoxy resin, has an average spiral flow length that is at least about 1.1 times greater than a comparable filler powder containing uncoated alumina powder mixed with the thermosetting resin. A preferred process for making the filler powder comprises: heating, simultaneously, an alumina powder with a second powder coated with an organo-silicate to a temperature for a time sufficient to volatilize, deposit and pyrolyze at least a portion of the organo-silicate on the alumina powder to form a silicon containing inorganic coating thereon.

Filler powder comprising a partially coated alumina powder and process to make the filler powder

Prepare sintered aluminum nitride bodies having a thermal conductivity of at least 200 W/m-K by sintering under non-reducing conditions and controlling interrelated parameters such as binder burnout atmosphere, heating rate, sintering temperature, time at sintering temperature, cooling rate and cooling temperature. Sintered bodies having thermal conductivities in excess of 200, especially in excess of 270, W/m-K result from this process.

Process for sintering aluminum nitride to a high thermal conductivity

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Midland, MI, United States of America

Lynne K Mills