Globalfoundries Inc.

Lynn Wang

Luigi Capodieci

Vito Dai

Sriram Madhavan

Yi Zou

Swamy Maddu

Peng Xie

A process and apparatus are provided for automated pattern-based semiconductor design layout correction. Embodiments include scanning a drawn semiconductor design layout to determine a difficult-to-manufacture pattern within the drawn semiconductor design layout based on a match with a pre-characterized difficult-to-manufacture pattern, determining a corrected pattern based on a pre-determined correlation between the corrected pattern and the pre-characterized difficult-to-manufacture pattern, and replacing the difficult-to-manufacture pattern with the corrected pattern within the drawn semiconductor design layout.

Automated design layout pattern correction based on context-aware patterns

Methodology enabling a reduction in a density difference between two complementary exposure masks and/or windows of a layout and an apparatus for performing the method are disclosed. Embodiments include: determining a layer of an IC design having features to be resolved by first and second masks; determining a difference of density by comparing a first density of a first set of the features with a second density of a second set of the features; determining a region on the layer of a first feature to be resolved by the first mask; and inserting, within the region, a polygon to be resolved by the second mask based on the difference of density.

Stitch insertion for reducing color density differences in double patterning technology (DPT)

One illustrative method disclosed herein involves producing an initial circuit layout, prior to decomposing the initial circuit layout, identifying at least one potential non-double-patterning-compliant (NDPC) pattern in the initial circuit layout, fixing the at least one potential non-double-patterning-compliant (NDPC) pattern so as to produce a double-patterning-compliant (DPT) pattern, producing a modified circuit layout by removing the potential non-double-patterning-compliant (NDPC) pattern and adding the double-patterning-compliant (DPT) pattern to the initial circuit layout, and performing design rule checking and double patterning compliance checking on the modified circuit layout.

Methods involving pattern matching to identify and resolve potential non-double-patterning-compliant patterns in double patterning applications

Methods for fabricating semiconductor devices are provided. In an embodiment, a method of fabricating a semiconductor device includes scanning a circuit design layout and proposing patterns for decomposed layouts. The proposed patterns are then compared with a library of prior patterns including a category of forbidden patterns and a category of preferred patterns. If a selected proposed pattern matches a forbidden pattern, the selected proposed pattern is eliminated. If the selected proposed pattern matches a preferred pattern, then the selected proposed pattern is identified for use in the decomposed layouts. Decomposed layouts are generated from the identified patterns. A plurality of masks is fabricated based on the decomposed layouts. Then a multiple patterning lithographic technique is performed with the plurality of masks on a semiconductor substrate.

Methods for decomposing circuit design layouts and for fabricating semiconductor devices using decomposed patterns

A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing a double patterning technology-compliant logical design for the integrated circuit, the logical design including a plurality of elements; scoring the design of one or more of the plurality of elements to produce a design score; modifying the design based at least in part on the design score; generating a mask set implementing the modified logical design; and employing the mask set to implement the logical design in and on a semiconductor substrate.

Methods for quantitatively evaluating the quality of double patterning technology-compliant layouts

A method for fabricating an integrated circuit is disclosed that includes, in accordance with an embodiment, providing a drawn layout logical design for the integrated circuit, the logical design including a plurality of patterns; checking the plurality of patterns for double patterning technology compliance; identifying a non-double patterning technology compliant pattern; providing a double patterning technology compliant pattern for replacing the identified non-double patterning technology compliant pattern, thereby creating a modified logical design; generating a mask set implementing the modified logical design; and employing the mask set to implement the modified logical design in and on a semiconductor substrate.

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Fremont, CA, United States of America

Lynn Wang