Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

At+t Corp.

At&t Bell Laboratories

Triquint Technology Holding Co.

Agere Systems Optoelectronics Guardian Corp.

Lynn Frances Schneemeyer

Ashraf W Lotfi

Michael Louis Steigerwald

Dean Paul Kossives

R Bruce Van Dover

Robert Bruce Van Dover

David Alan Ackerman

Charles D Brandle, Jr

Robert McLemore Fleming

Anatoly Feygenson

Glen Robert Kowach

Glen B Alers

Thomas L Koch

Gordon Albert Thomas

Robert Louis Hartman

Henry Hon Law

William Larry Wilson

Richard Bendicks Bylsma

Malcolm Ellis Lines

Te-Sung Wu

Eric S Hellman

Elliot H Hartford, Jr

Kenneth A Jackson

Denis N Buchanan

The present invention provides a power micromagnetic integrated circuit having a ferromagnetic core, a method of manufacture therefor and a power processing circuit employing the same, that-includes: (1) a substrate; (2) an insulator coupled to the substrate and (3) a metallic adhesive that forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate.

Micromagnetic device for power processing applications and method of manufacture therefor

The thermo-optic behavior of an optical path over a range of temperatures is controlled by determining a figure of merit (FoM) for the optical path and including in the path a body of NaBi(MoWO)crystalline material that enables the conditions specified by the FOM to be satisfied. The NaBi(MoWO)crystalline material is highly transparent at a wavelength of radiation propagating in the path, and has a coefficient of thermal expansion (CTE) and a refractive index n such that the CTE and dn/dT of the etalon compensate one another so as to perform frequency discrimination that is essentially temperature insensitive over the range &#x394;T. The NaBi(MoWO)crystalline material exhibits temperature independent transmission characteristics at about room temperature and at a wavelength of about 1550 nm.

Optical device with a temperature insensitive optical pathlength

A method of manufacturing an integrated circuit and an integrated circuit employing the same. In one embodiment, the method of manufacturing the integrated circuit includes (1) conformally mapping a micromagnetic device, including a ferromagnetic core, to determine appropriate dimensions therefor, (2) depositing an adhesive over an insulator coupled to a substrate of the integrated circuit and (3) forming the ferromagnetic core of the appropriate dimensions over the adhesive.

Integrated circuit having a micromagnetic device and method of manufacture therefor

An integrated circuit and method of manufacturing therefor. In one embodiment, the integrated circuit includes a substrate with an insulator and a capacitor formed over the substrate. The integrated circuit further includes an adhesive formed over the insulator. The integrated circuit still further includes a micromagnetic device. The micromagnetic device includes a ferromagnetic core formed over the adhesive. The adhesive forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate. The micromagnetic device also includes at least one winding, located proximate the ferromagnetic core, to impart a desired magnetic property to the ferromagnetic core. The micromagnetic device is electrically coupled to the capacitor.

The specification describes silicon MOS devices with gate dielectrics having the composition Ta Al O , where x is 0.03-0.7 and y is 1.5-3, Ta Si O , where x is 0.05-0.15, and y is 1.5-3, and Ta Al Si O , where 0.7>x&plus;z>0.05, z<0.15 and y is 1.5-3. By comparison with the standard SiO gate dielectric material, these materials provide improved dielectric properties and also remain essentially amorphous to high temperatures. This retards formation of SiO interfacial layers which otherwise dominate the gate dielectric properties and reduce the overall effectiveness of using a high dielectric material.

MOS transistors with improved gate dielectrics

The thermo-optic behavior of an optical path over a range of temperatures &Dgr;T is controlled by determining a figure-of-merit (FOM) for the optical path and including in the path a body of crystalline material that enables the conditions specified by the FOM to be satisfied. The crystalline material is highly transparent at a wavelength &lgr; of radiation propagating in the path, and it has a coefficient of thermal expansion (CTE) and a refractive index n such that the CTE and dn/dT are mutually adapted to satisfy the FOM over the range &Dgr;T. In one embodiment, the CTE and dn/dT of an etalon compensate one another so as to perform frequency discrimination that is essentially temperature insensitive over the range &Dgr;T. In a preferred embodiment of the optical etalon the crystalline material comprises LiCaAlF .

Using crystalline materials to control the thermo-optic behavior of an optical path

The specification describes stepped etalon structures and techniques for their fabrication. The preferred etalon material is LiCaAlF , which is not efficiently processed using reactive ion etching. The approach of the invention is to produce the steps on the etalon by depositing a blanket layer of step material that is effectively etched by RIE, masking a portion of the step material, and etching the masked blanket layer using the LiCaAlF substrate as an etch stop. These process steps may be repeated to form multiple steps on the etalon. Etalon structures with steps on both major surfaces are described, as well as etalon structures with steps having differing areas. In the latter case a difference in amplitude in the output signal from a single detector can be used to identify the step that is resonating.

Methods for fabricating stepped etalons

Method of making integrated circuit having a micromagnetic device

The invention relates to dielectric materials comprising films of R&mdash;Ge&mdash;Ti&mdash;O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula R &mdash;Ge &mdash;Ti &mdash;O where 0.05&gE;x&lE;1, 0.05&gE;y&lE;1, 0.1&gE;z&lE;1, and 1&gE;w&lE;2, and x&plus;y&plus;z&cong;1, and more preferably, where 0.15&gE;x&lE;0.7, 0.05&gE;y&lE;0.3, 0.25&gE;z&lE;0.7, and 1.95&gE;w&lE;2.05, and x&plus;y&plus;z&cong;1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.

Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same

Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor

For use with an integrated circuit having a substrate and an insulator coupled to the substrate, a micromagnetic device and method of manufacturing therefor. In one embodiment, the micromagnetic device includes an adhesive coupled to the insulator and a ferromagnetic core, coupled to the adhesive that forms a bond between the insulator and the ferromagnetic core, having an anisotropic property.

Micromagnetic device having an anisotropic ferromagnetic core and method of manufacture therefor

A data transmission micromagnetic integrated circuit having a ferromagnetic core, a method of manufacture therefor and a data transmission circuit employing the same. In one embodiment, the micromagnetic integrated circuit includes: (1) a substrate; (2) an insulator coupled to the substrate and (3) a metallic adhesive that forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate.

Micromagnetic device for data transmission applications and method of

The present invention provides a power micromagnetic integrated circuit having a ferromagnetic core, a method of manufacture therefor and a power processing circuit employing the same, that includes: (1) a substrate; (2) an insulator coupled to the substrate and (3) a metallic adhesive that forms a bond between the insulator and the ferromagnetic core to secure the ferromagnetic core to the substrate.

Micromagnetic device for power processing applications and method of

In accordance with the invention, an improved optical communication system employs light-generating devices comprising a phonon-tuned crystal alloy host doped with an optically active atom. In one embodiment, the crystal alloy host and optically active atom respectively comprise spinel and nickel. The spinel material is typically a solid solution between magnesium aluminate and magnesium gallate.

Growing community of inventors

Westfield, NJ, United States of America

Lynn Frances Schneemeyer