University of Illinois

Lawrence Livermore National Security, LLC

Lynford L Goddard

Tiziana C Bond

Garrett Cole

Gang Logan Liu

Chris Edwards

Gabriel Popescu

Xin Yu

Weibin Qiu

Jinlong Zhu

Lonna Edwards

Kaiyuan Wang

Terry Koker

Amir Arbabi

Paul Vannest Braun

Songbin Gong

Paul Scott Carney

Kimani C Toussaint

Jeffrey S Kallman

Daniel Bacon-Brown

Lisa Anne Plucinski Hackett

Meisam Bahadori

S Derin Babacan

Mustafa A H Mir

Taewoo Kim

Young Mo Kang

Corey Richards

Jeff Kallman

Samuel Washington

Abid Ameen

Shailendra Srivastava

Julianne Lee

Catherine Britt Carlson

Christian H Ocier

Faiza Khawar Dar

Qing Ding

Renjie Zhou

An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.

Resonant-based photonic intensity modulators integrated with fully etched thin-film lithium niobate waveguides

A device includes an optic in an at least partially rigid scaffold. The scaffold is permeated, at least temporarily during a writing process, by writable media. The optic may be written into a writable volume in the scaffold defined by the writable media. The optic may be written by exposing the writable media to incident light to cause a material property change in the writable media within the writable volume.

Volumetric optical integrated circuits

Provided are plasmon resonance imaging devices having metal-insulator-metal nanocups and methods of use thereof.

Plasmon resonance imaging apparatus having metal-insulator-metal nanocups

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. Charge carriers are driven away from the surface of the semiconductor on a timescale short compared to the carrier recombination lifetime. Such methods are applied to creating a spatially varying doping profile in the semiconductor substrate, a photonic integrated circuit and an integrated photonic microfluidic circuit.

Spectrally and temporally engineered processing using photoelectrochemistry

Methods and apparatus for concentrating light into a specified focal volume and for collecting light from a specified volume. Incident light is coupled through a plurality of successive transmissive asymmetric microstructure elements. The succession of transmissive asymmetric microstructure elements may be designed by representing an electromagnetic field as a linear combination of eigenmodes of one of the succession of transmissive asymmetric microstructure elements. The asymmetric microstructure elements are represented as a plurality of mesh lattice units and eigenmode solutions to Maxwell's equations are obtained for each mesh lattice unit subject to consistent boundary conditions. S-matrix formalism is employed to calculate a field output and weighting coefficients for the eigenmodes are selected to achieve a specified set of field output characteristics.

Spatial control of the optical focusing properties of photonic nanojets

Methods and apparatus for subtractively fabricating three-dimensional structures relative to a surface of a substrate and for additively depositing metal and dopant atoms onto the surface and for diffusing them into the bulk. A chemical solution is applied to the surface of the semiconductor substrate, and a spatial pattern of electron-hole pairs is generated by projecting a spatial pattern of illumination characterized by a specified intensity, wavelength and duration at each pixel of a plurality of pixels on the surface. An electrical potential is applied across the interface of the semiconductor and the solution with a specified temporal profile relative to the temporal profile of the spatial pattern of illumination. Such methods are applied to the fabrication of a photodetector integral with a parabolic reflector, cell size sorting chips, a three-dimensional photonic bandgap chip, a photonic integrated circuit, and an integrated photonic microfluidic circuit.

Configurations for in-situ gas detection are provided, and include miniaturized photonic devices, low-optical-loss, guided-wave structures and state-selective adsorption coatings. High quality factor semiconductor resonators have been demonstrated in different configurations, such as micro-disks, micro-rings, micro-toroids, and photonic crystals with the properties of very narrow NIR transmission bands and sensitivity up to 10(change in complex refractive index). The devices are therefore highly sensitive to changes in optical properties to the device parameters and can be tunable to the absorption of the chemical species of interest. Appropriate coatings applied to the device enhance state-specific molecular detection.

Resonant optical transducers for in-situ gas detection

Methods for obtaining a tomographic phase image of a specimen, either in transmission or in scatter. A specimen is illuminated by a temporally incoherent source and light collected in transmission or scattering is used to generate a scattered phase image of the specimen in multiple axial planes. The scattered field is solved for in wavevector space, and a derived instrument function is deconvolved to obtain specimen susceptibility in wavevector space. The specimen susceptibility is transformed to obtain a three-dimensional phase tomogram of the specimen.

White light diffraction tomography of unlabeled live cells

Methods and apparatus for method for characterizing a height profile of a scattering surface relative to a fiducial plane. The scattering surface, which may be an interface between distinct solid, liquid, gaseous or plasma phases, is illuminated with substantially spatially coherent light, and light scattered by the scattering surface is collected and dispersed, such as by a grating, into zeroth- and first-order beams. A spatial Fourier transform of the zeroth- and first-order beams is created, and one of the beams is low-pass filtered. The beams are interfered at a focal plane detector to generate an interferogram, which is transformed to retrieve a spatially resolved quantitative phase image and/or an amplitude image of the scattering surface. Imaging may be performed during an etching process, and may be used to adaptively control a photoetching process in a feedback loop.

Optically monitoring and controlling nanoscale topography

A component having a microring resonator and grating, coupled to a waveguide is described. By selection of the grating period, and other parameters such as the grating-waveguide coupling coefficient, an efficient filter may be designed and constructed. The component may be used in passive devices such as add-drop multiplexers or sensors, or in active devices such as lasers. Designs having essentially no response sidelobes, very narrow effective bandwidths, and fast filter roll-offs may permit compact devices to be produced, when compared with typical distributed sampled Bragg grating structures.

Distributed reflector in a microring resonator

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCland Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

Method of plasma etching GA-based compound semiconductors

A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiClgas into the chamber, flowing Ar gas into the chamber, and flowing Hgas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

Method of plasma etching Ga-based compound semiconductors

Compact tunable optical cavities are provided for in-situ NIR spectroscopy. MEMS-tunable VCSEL platforms represents a solid foundation for a new class of compact, sensitive and fiber compatible sensors for fieldable, real-time, multiplexed gas detection systems. Detection limits for gases with NIR cross-sections such as O, CH, COand NOhave been predicted to approximately span from 10to 10s of parts per million. Exemplary oxygen detection design and a process for 760 nm continuously tunable VCSELS is provided. This technology enables in-situ self-calibrating platforms with adaptive monitoring by exploiting Photonic FPGAs.

Tunable photonic cavities for in-situ spectroscopic trace gas detection

A system in one general embodiment includes a waveguide structure comprising a core of an alloy of Group III-V materials surrounded by an oxide (which may include one or more Group III-V metals), wherein an interface of the oxide and core is characterized by oxidation of the alloy for defining the core. A method in one general approach includes oxidizing a waveguide structure comprising an alloy of Group III-V materials for forming a core of the alloy surrounded by an oxide.

Growing community of inventors

Champaign, IL, United States of America

Lynford L Goddard