National Research Council of Canada

Enablence Inc.

Lynden Erickson

Boris Lamontagne

Siegfried Janz

Dan-Xia Xu

Pavel Cheben

David John Lockwood

Sylvain Charbonneau

Andre Delage

Patrik Schmuki

Jian-Jun He

Matt Pearson

Emil S Koteles

John Miller

Kokou Dossou

Andr&eacute; Del&acirc;ge

An Echelle grating has alternate first () and second () sets of facets (). The first set of facets () is operative to reflect incident light () for diffraction and the second set of facets () extends between adjacent facets of the first set (). Only the first set of facets () is metallized to enhance reflection. The second set of facets () is left unmetallized. This configuration reduces polarization dependent loss (PDL).

Echelle gratings with low Polarization Dependent Loss (PDL) using metal coating on the reflecting facets only

An optical performance monitor for measuring the performance of optical networks has an echelle grating for demultiplexing an input beam into a plurality of wavelengths that are focused onto an array of divided output waveguides. Each divided output waveguide is positioned to receive a corresponding demultiplexed wavelength from the echelle grating or other waveguide multiplexer device. The divided output waveguides laterally separate the corresponding demultiplexed wavelength into a first and second portions. A detector array is positioned to receive the respective portions of the demultiplexed wavelengths and by comparing their relative intensity it is possible to detect any drift in the nominal wavelengths of the channels.

Optical performance monitor

A porous semiconductor is created by electrochemical etching. Selected regions of a semiconductor are first treated to reduce the threshold potential at which pore formation occurs, and then an electrochemical etch is carried out on the semicnoductor at a potential at least equal to the reduced threshold potential for the selected regions and less than the threshold potential for untreated regions. The selective treatment preferably involves implantation with the same ions as the semiconductor, i.e. Si ions for silicon. The treatment results in the formation of highly defined etch patterns or patterns of porous material depending on the process conditions.

Selective electrochemical process for creating semiconductor nano- and micro-patterns

A planar waveguide optical device whose wavelengths are stabilized by temperature, has an input channel, a series of output data channels, and a dispersive element, such as a diffraction grating or phase array, for directing component wavelengths of incoming light into the respective output data channels. A pair of monitor channels have a separation less than, and a width greater than, the data channels. A differential feedback arrangement controls the temperature of the demultiplexer according a differential signal received from the pair of monitor channels.

Wavelength stabilized planar waveguide optical devices incorporating a dispersive element

A porous semiconductor is created by electrochemical etching. Selected regions of a semiconductor are first treated to reduce the threshold potential at which pore formation occurs, and then an electrochemical etch is carried out on the semiconductor at a potential at least equal to the reduced threshold potential for the selected regions and less than the threshold potential for untreated regions. The selective treatment preferably involves implantation with the same ions as the semiconductor, i.e. Si ions for silicon. The treatment results in the formation of highly defined etch patterns or patterns of porous material depending on the process conditions.

Selective electrochemical process for creating semiconductor nano-and micro-patterns

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Lynden Erickson