Motorola Corporation

Freescale Semiconductor,inc.

Lyndee L Hilt

Jamal Ramdani

Ravindranath Droopad

Kurt W Eisenbeiser

William J Ooms

High quality epitaxial layers of GaN can be grown overlying large silicon wafers () by forming an amorphous layer () on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (). Any lattice mismatch between the GaN layer and the underlying substrate is taken care of by the amorphous layer.

Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. A monocrystalline graded layer, in which the lattice constant varies with the thickness of the layer, is then formed over the accommodating buffer layer, such that a lattice constant of the top of the graded layer substantially matches the lattice constant of a subsequently grown monocrystalline film.

Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure

High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.

Electro-optic structure and process for fabricating same

A composite semiconductor including silicon and compound semiconductor, and having a silicate layer for promoting layer-by-layer monocrystalline growth. Silicon may be introduced to react with the monocrystalline oxide layer to form the silicate layer. During the fabrication process, the thickness of the amorphous oxide layer may be increased by suitable methods, such as annealing or oxygen diffusion.

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Chandler, AZ, United States of America

Lyndee L Hilt