Eastman-kodak Company

Cerion LLC

Other

Lyn Marie Irving

David Howard Levy

Richard P Szajewski

Mark Edward Irving

Xiqiang K Yang

Peter Jerome Cowdery-Corvan

Diane Carol Freeman

Wojciech K Slusarek

James Henry Reynolds

Jared B Mooberry

John M Noonan

James J Seifert

Timothy W Stoebe

Cheng Yang

Carolyn Rae Ellinger

Lan B Thai

Zbyslaw R Owczarczyk

Richard Kenneth Hailstone

Andrea C Scuderi

Paul B Merkel

Shelby Forrester Nelson

David T Southby

Krishnan Chari

Kenneth Joseph Reed

David Wallace Sandford

Albert Gary Difrancesco

Thomas Dale Allston

Carly Louise Augustyn

David K Southby

Aqueous and substantially crystalline iron oxide nanoparticle dispersions and processes for making them are disclosed. The nanoparticle size and size distribution width are advantageous for use in a fuel additive for catalytic reduction of soot combustion in diesel particulate filters. Nanoparticles of the aqueous colloid are transferred to a substantially non-polar liquid comprising a carboxylic acid and one or more low-polarity solvents. The transfer is achieved by mixing the aqueous and substantially non-polar materials, forming an emulsion, followed by a phase separation into a substantially metal-free remnant polar phase and a substantially non-polar organic colloid phase. A method for rapid and substantially complete transfer of non-agglomerated nanoparticles to the low polarity phase in the presence of an organic amine, and a rapid phase separation of the substantially non-polar colloid from a remnant aqueous phase, are provided.

Iron oxide nanoparticle dispersions and fuel additives for soot combustion

A process for forming alkaline earth metal cerate nanoparticles comprises combining a stable cerium oxide aqueous colloidal dispersion with soluble alkaline earth metal salts while maintaining colloidal stability. The resulting alkaline earth metal salts may be calcined to form alkaline earth metal cerate particles having a perovskite structure.

Barium cerate nanoparticles for use in solid oxide fuel cells

A method of making cerium-containing metal oxide nanoparticles in non-polar solvent eliminates the need for solvent shifting steps. The direct synthesis method involves: (a) forming a reaction mixture of a source of cerous ion and a carboxylic acid, and optionally, a hydrocarbon solvent; and optionally further comprises a non-cerous metal ion; (b) heating the reaction mixture to oxidize cerous ion to ceric ion; and (c) recovering a nanoparticle of either cerium oxide or a mixed metal oxide comprising cerium. The cerium-containing oxide nanoparticles thus obtained have cubic fluorite crystal structure and a geometric diameter in the range of about 1 nanometer to about 20 nanometers. Dispersions of cerium-containing oxide nanoparticles prepared by this method can be used as a component of a fuel or lubricant additive.

Cerium containing nanoparticles prepared in non-polar solvent

The invention relates to a process for forming a structure comprising providing a support, coating one side of said support with a colored mask, coating a layer photopatternable by visible light, and exposing the layer through the colored mask with visible light to photopattern the layer.

Integrated color mask

A process for forming a pixel circuit is disclosed comprising: (a) providing a transparent support; (b) forming a multicolor mask having at least four different color patterns; (c) forming integrated electronic components of the pixel circuit having at least four layers of patterned functional material comprising a first conductor, a dielectric, a semiconductor, and a second conductor each layer of patterned functional material corresponding to the four different color patterns of the multicolor mask. The functional material is patterned using a photopattern corresponding to each color pattern.

Multicolored mask process for making display circuitry

The invention relates to a process for forming a structure comprising: (a) providing a transparent support; (b) forming a color mask having a selected absorption spectral range wherein the color mask has an effectively transparent portion and a partially absorptive portion, wherein the partially absorptive portion includes at least two portions having different optical densities within the absorption spectral range; (c) coating a layer of a photopatternable material sensitive to visible light in the absorption spectral range; (d) exposing and developing the photopatternable material to form a photopattern corresponding to at least one of said two portions of the partially absorptive portion; and (e) depositing and patterning a layer of functional material such that a pattern of functional material results corresponding to the at least one of said two portions of the partially absorptive portion.

Gradient colored mask

The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.

Colored mask combined with selective area deposition

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Process for selective area deposition of inorganic materials

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Organosiloxane materials for selective area deposition of inorganic materials

The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.

Process for atomic layer deposition

An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Photopatternable deposition inhibitor containing siloxane

A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300&#xb0; C. during fabrication.

Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby

The invention provides an image sensor that has an array of photosensors and an array of micro-lenses with each micro-lens confronting more than one of the photosensors and concentrating light striking each micro-lens onto less than all of the confronted photosensors so that selected photosensors receive a greater exposure than other photosensors.

Growing community of inventors

Rochester, NY, United States of America

Lyn Marie Irving