Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Lutz Höppel

Norwin Von Malm

Jürgen Moosburger

Karl Engl

Patrick Rode

Matthias Sabathil

Thomas Schwarz

Martin Strassburg

Matthias Peter

Alexander F Pfeuffer

Uwe Strauss

Markus Maute

Ralph Wirth

Frank Singer

Siegfried Herrmann

Volker Härle

Christoph Eichler

Korbinian Perzlmaier

Tony Albrecht

Johannes Baur

Alexander Linkov

Magnus Ahlstedt

Christian Leirer

Tobias Meyer

Britta Göötz

Dominik Scholz

Werner Bergbauer

Klaus Streubel

Adrian Stefan Avramescu

Ulrich Zehnder

Rainer Butendeich

Andreas Weimar

Philipp Drechsel

Heribert Zull

Tetsuya Taki

Anna Kasprzak-Zablocka

Sebastian Taeger

Jens Richter

Stefanie Rammelsberger

Thorsten Frank Baumheinrich

Andreas Plößl

Michael Huber

Martin Straβburg

Christopher Kölper

Gudrun Lindberg

Andreas Leber

Rainer Hartmann

Johann Eibl

Tilman Rügheimer

Georg Hartung

Thomas Bauer

Tobias Berthold

In an embodiment a method for producing a component having a carrier and at least one component part electrically conductively connected to the carrier and mechanically fixed to the carrier by an electrically insulating bonding layer includes providing the carrier having a connection layer, wherein the bonding layer is disposed on the carrier and has at least one opening, wherein a connection surface of the connection layer is exposed, and wherein the bonding layer projects vertically beyond the exposed connection surface or vice versa, applying the component part having a contact layer on the carrier in such that, in top view of the carrier, an exposed contact surface of the contact layer covers the opening and the connection surface located therein, wherein the exposed contact surface is spaced apart from the exposed connection surface by a vertical distance and reducing the vertical distance by changing a volume of the bonding layer such that the exposed contact surface and the exposed connection surface are brought together, such that they are directly adjacent to each other and such that a direct electrical contact is formed between the contact layer and the connection layer.

Method for producing a component, and component

A component assembly includes an intermediate carrier, a plurality of components and a plurality of anchoring elements. The components have at least two electrical devices and an insulating layer. At least one of the electrical devices is an optoelectronic semiconductor chip. The insulating layer is between the electrical devices of a same component. The at least two electrical devices of the same component are arranged next to one another and enclosed laterally by the insulating layer. The at least two electrical devices and the insulating layer of the same component are integral parts of a self-supporting and mechanically stable unit. The self-supporting and mechanically stable unit and the anchoring elements fix the positions of the components on the intermediate carrier. The components that are self-supporting and mechanically stable units are detachable from the intermediate carrier, and the anchoring elements release the components under mechanical load when the latter are removed.

Component assembly and method for producing components

The method of manufacturing a plurality of semiconductor chips () comprises a step A) of providing a semiconductor substrate () having a plurality of integrated electronic circuits () on a top side () thereof. In a step B), a sacrificial layer () is applied on one side of the semiconductor substrate. In a step C), holes () are introduced in the sacrificial layer so that at least one hole is formed above each electronic circuit. In a step D), the semiconductor substrate is adhered to a carrier () with the sacrificial layer at the front, an adhesive layer () being used between the sacrificial layer and the carrier, and the adhesive layer filling the holes so that holding elements () from the adhesive layer are formed in the holes. In a step E) the semiconductor substrate is thinned. In a step F) separation trenches () are introduced between the electronic circuits, which extend from a side of the electronic circuits facing away from the carrier to the sacrificial layer and penetrate the thinned semiconductor substrate. In a step G) the sacrificial layer is removed in the region between the electronic circuits and the carrier.

Method for producing a plurality of semiconductor chips and semiconductor chip

A method for producing a component and a component are disclosed. In an embodiment a method includes providing a substrate, applying a composite of components to the substrate, forming an anchoring layer on the composite of components, attaching a carrier to the anchoring layer, wherein the anchoring layer is disposed between the substrate and the carrier and removing the substrate, wherein the composite of components is divided into a plurality of components by forming a plurality of separating trenches, wherein, after removing the substrate, the components continue to be held on the carrier by the anchoring layer, and wherein the anchoring layer comprises at least one predetermined breaking layer having at least one predetermined breaking position, the predetermined breaking position being laterally surrounded by the separating trenches and&#x2014;in a plan view of the carrier&#x2014;being covered by one of the components.

Method of separating a component using predetermined breaking position and a component obatined by such method

A method for transferring semiconductor bodies and a semiconductor chip are disclosed. In an embodiment a method includes providing a semiconductor structure on a growth substrate, arranging a cover layer on a side of the semiconductor structure facing away from the growth substrate, wherein the cover layer is mechanically fixedly connected to the semiconductor structure, arranging a transfer structure on a side of the cover layer facing away from the semiconductor structure, wherein the transfer structure is mechanically fixedly connected to the cover layer via at least one contact structure, wherein a sacrificial layer is arranged between the cover layer and the transfer structure, and wherein the sacrificial layer does not cover any of the at least one contact structure, removing the growth substrate from the semiconductor structure, subdividing the semiconductor structure into a plurality of semiconductor bodies, arranging a carrier on a side of the semiconductor body facing away from the transfer structure, selectively removing the sacrificial layer and removing the transfer structure from the semiconductor bodies.

Method for transferring semiconductor bodies and semiconductor chip

An optoelectronic semiconductor chip includes a semiconductor body including a first semiconductor region, a second semiconductor region and an active zone disposed between the first and second semiconductor regions, an electrically conductive contact layer arranged on a side of the first semiconductor region facing away from the second semiconductor region, and an electrically conductive mirror layer arranged between the first semiconductor region and the electrically conductive contact layer, and laterally protruding at the edge by the first semiconductor region and the electrically conductive contact layer so that between the first semiconductor region and the electrically conductive contact layer there is an interspace in which a protective layer is arranged for protecting the mirror layer, wherein the electrically conductive contact layer extends laterally to an edge of the first semiconductor region, and the electrically conductive contact layer consists of Ni.

Optoelectronic semiconductor chip and method of producing an optoelectronic semiconductor chip

A component having a metal carrier and a method for producing a component are disclosed. In an embodiment the component includes a carrier having a metallic carrier layer, an insulating layer and a first through-contact extending in a vertical direction throughout the carrier layer, wherein the through-contact is electrically isolated from the carrier layer via the insulating layer. The component further includes a semiconductor body and a wiring structure arranged in the vertical direction between the carrier and the semiconductor body at least places and electrically contacting the semiconductor body, wherein the wiring structure has a first connection area and a second connection area, wherein the connection areas adjoin the carrier and are assigned to different electrical polarities of the component, wherein the first through-contact is in electrical contact with one of the connection areas, and wherein the component is configured to be externally electrically connectable via the carrier.

Component having a metal carrier and method for producing components

A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged; arranging a protection diode on the first contact and the second contact; galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and embedding the first pin, the second pin, and the protection diode in a molded body.

Method of producing optoelectronic component with integrated protection diode

A light-emitting semiconductor chip and a method for producing a light-emitting semiconductor chip are disclosed. In an embodiment a light-emitting chip includes a semiconductor body having an active region designed to generate light, a dielectric mirror including an electrically insulating material and a first metallic mirror including an electrically conductive material, wherein the semiconductor body expands towards a light exit side, wherein the dielectric mirror is arranged on a side of the semiconductor body facing away from the light exit side, wherein the first metallic mirror is arranged on a side of the dielectric mirror facing away from the semiconductor body, wherein the first metallic mirror electrically contacts the semiconductor body through at least one opening in the dielectric mirror, and wherein the dielectric mirror, apart from the at least one opening, completely covers the semiconductor body on the side facing away from the light exit side.

Light-emitting semiconductor chip and method for producing a light-emitting semiconductor chip

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a component includes a semiconductor layer sequence having a first semiconductor layer, an active layer, a second semiconductor layer and a top side stacked in the recited order, a first contact layer arranged at the first semiconductor layer, a mirror layer arranged on the top side and a recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer, wherein the recess has a bottom surface in a region of the first semiconductor layer, wherein the mirror layer covers a portion of the recess in plan view, wherein the first contact layer is in direct electrical and mechanical contact with a contact pin, and wherein the contact pin extends from the first contact layer to the top side of the semiconductor layer sequence.

Optoelectronic component and method for producing an optoelectronic component

A method of producing a plurality of optoelectronic semiconductor components includes a) preparing a composite with a semiconductor layer sequence, wherein the composite includes a plurality of component areas mechanically connected to one another; b) forming a plurality of connecting surfaces on the semiconductor layer sequence, wherein at least one connecting surface is formed on each component area; c) forming a molding compound on the semiconductor layer sequence, wherein the molding compound fills interstices between the connecting surfaces; and d) singulating the composite with the molding compound, wherein during singulation a plurality of molded bodies is formed from the molding compound, each of which is associated with a semiconductor body obtained from a component area of the composite.

Method of producing a plurality of optoelectronic semiconductor components and optoelectronic semiconductor component

A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.

Component having improved coupling-out properties

An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor chip includes a carrier and a semiconductor body having an active layer that generates electromagnetic radiation, wherein the semiconductor body is arranged on the carrier, the semiconductor body has a first main surface facing away from the carrier and a second main surface facing the carrier, the semiconductor chip has a side surface having an anchoring structure, and the second main surface is arranged between the first main surface and the anchoring structure.

Optoelectronic semiconductor chip, optoelectronic component, and method of producing semiconductor chips

A method for producing optoelectronic semiconductor components () is specified, wherein a carrier () having a carrier main side () is provided. Furthermore, a plurality of singulated optoelectronic semiconductor chips () are provided, wherein the semiconductor chips () each have a main emission side () and a contact side () opposite the main emission side (). The singulated semiconductor chips () are then applied to the carrier main side (), such that the contact side () in each case faces the carrier main side (). In regions between the semiconductor chips, a mask frame () is applied, wherein the mask frame () is a grid of partitions (). In a plan view of the carrier main side (), each semiconductor chip () is surrounded all around by the partitions (). The semiconductor chips () are potted with a conversion material () such that a conversion element () is respectively formed on the semiconductor chips (). In this case, the conversion element () at least partly covers the main emission side () of the respective semiconductor chip (). The carrier () is then removed. In a further step, the optoelectronic semiconductor components () are detached from the mask frame (), the mask frame () being destroyed.

Method for producing optoelectronic semiconductor components and optoelectronic semiconductor component

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Alteglofsheim, Germany

Lutz Höppel