Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Opto Semiconductor Gmbh

Osram Oledgmbh

Lutz Hoeppel

Matthias Sabathil

Patrick Rode

Karl Engl

Norwin Von Malm

Martin Strassburg

Juergen Moosburger

Stefan Illek

Andreas Weimar

Frank Singer

Alexander F Pfeuffer

Korbinian Perzlmaier

Johannes Baur

Andreas Ploessl

Dominik Scholz

Attila Molnar

Thomas Schwarz

Siegfried Herrmann

Christoph Eichler

Uwe Strauss

Jürgen Moosburger

Tony Albrecht

Matthias Peter

Alexander Linkov

Hans-Jürgen Lugauer

Andreas Biebersdorf

Markus Maute

Bernd Barchmann

Isabel Otto

Anna Kasprzak-Zablocka

Albrecht Kieslich

Vincent Grolier

Peter Nagel

Christine Rafael

Christopher Koelper

An optoelectronic semiconductor device may include a carrier having a roughened first main surface and optoelectronic semiconductor chips arranged over the roughened first main surface. The combined surface area of the optoelectronic semiconductor chips is smaller than the surface area of the carrier, and a part of the roughened first main surface is arranged between adjacent optoelectronic semiconductor chips.

Optoelectronic semiconductor apparatus including an optoelectronic semiconductor device having a carrier with a roughened first main surface and method for manufacturing thereof

In an embodiment a composite semiconductor component includes a carrier substrate having a plurality of projecting elements projecting from a first main surface of the carrier substrate, an electrically conductive material electrically conductively connected to a contact region of the carrier substrate and located on at least one of the projecting elements, some of the projecting elements not being covered with the electrically conductive material and a semiconductor chip arranged on the carrier substrate and having at a first surface at least one contact pad electrically connected to the electrically conductive material on at least one element, wherein, at a position at which the contact pad and the electrically conductive material on the projecting element are in each case in contact with one another, the contact pad has a larger lateral extent than the projecting element in each case.

Composite semiconductor component having projecting elements projecting from a carrier substrate and method for producing the composite semiconductor component

In an embodiment, a multi-chip module includes a first carrier including a mold material and at least two light-emitting diode chips embedded at least by side faces in the first carrier, wherein the light-emitting diode chips have first electrical contacts on a front side and second electrical contacts on a rear side, wherein the front side is configured as a radiation side, wherein the first electrical contacts are connected to control lines, wherein the control lines are arranged on a front side of the first carrier, wherein the second electrical contacts are connected to a collective line, and wherein the collective line is led to a rear side of the first carrier.

Multi-chip module with light-emitting diode (LED) chips configured for surface mount technology (SMT)

A mount () and an optoelectronic component () with the mount () are provided, wherein the mount () comprises a moulding (), at least one through-contact () and a plurality of reinforcing fibres (), wherein the moulding () is formed from an electrically insulating moulding material (), the through-contact () is formed from an electrically conductive material, and the reinforcing fibres () produce a mechanical connection between the moulding () and the through-contact () by the reinforcing fibres () being arranged in certain regions of the moulding () and arranged in certain regions of the through-contact (). A method for producing a mount or a component with such a mount is also provided.

Carrier for a component, component and method for producing a carrier or a component

A method for producing a component may include providing a composite including a semiconductor layer stack, a first connection layer and a second connection layer, wherein the first and second connection layers are arranged on the semiconductor layer stack, are assigned to different electrical polarities and are configured for the electrical contacting of the component to be produced, applying a molded body material on the composite for forming a molded body, such that in a plan view of the semiconductor layer stack the molded body covers the first connection layer and the second connection layer, forming a first cutout and a second cutout through the molded body for exposing the connection layers in places, and filling the first and second cutouts with an electrically conductive material for forming through contacts which are electrically conductively connected to the connection layers and extend through the molded body in the vertical direction.

Semiconductor element and method for production thereof

The invention relates, inter alia, to a method for producing a plurality of semiconductor chips, the method comprising the following steps: providing a substrate (); applying a semiconductor layer sequence () to the substrate (); generating a plurality of recesses () in the semiconductor layer sequence () on the side of the semiconductor layer sequence () that is facing away from the substrate (); detaching the substrate () from the semiconductor layer sequence (); thinning the semiconductor layer sequence () on the side that was facing the substrate () prior to detaching the substrate ().

Method for producing a plurality of semiconductor chips having recesses in the device layer

A method for producing a component may include providing a composite containing a semiconductor stack layer, a first exposed connection layer and a second exposed connection layer, where the connection layers are arranged on the semiconductor stack, assigned to different electrical polarities and are configured to electrically contact the component to be produced; forming a first through contact exposed in lateral directions on the first connection layer and a second through contact exposed in lateral directions on the second connection layer, where the through contacts are formed from an electrically conductive connection material; and applying a molded body material on the composite for forming a molded body, where each of the through contacts are fully and circumferentially enclosed by the molded body at least in the lateral directions, such that the molded body and the through contacts form a permanently continuous carrier which mechanically carries the component to be produced.

Method for producing a component, and a component

Disclosed is a method for producing a plurality of semiconductor chips (). A composite (), which comprises a carrier () and a semiconductor layer sequence (), is provided. Separating trenches () are formed in the semiconductor layer sequence () along an isolation pattern (). A filling layer () limiting the semiconductor layer sequence () toward the separating trenches () is applied to a side of the semiconductor layer sequence () facing away from the carrier (). Furthermore, a metal layer () adjacent to the filling layer () is applied in the separating trenches (). The semiconductor chips () are isolated by removing the metal layer () adjacent to the filling layer () in the separating trenches (). Each isolated semiconductor chip () has one part of the semiconductor layer sequence (), and of the filling layer (). Also disclosed is a semiconductor chip ().

Method for producing a plurality of semiconductor chips and semiconductor chip

Disclosed is an optoelectronic semiconductor chip () comprising: &#x2014;a succession of semiconductor layers () that has a main plane of extension, an active layer () and a bottom surface (); &#x2014;a substrate () that is arranged on the bottom surface () of the succession of semiconductor layers () and has a base surface () facing away from the bottom surface (); and &#x2014;a succession of joining layers () which is arranged in at least some locations between the succession of semiconductor layers () and the substrate () in a vertical direction; wherein &#x2014;the substrate () laterally protrudes from the succession of semiconductor layers () by a maximum of 10 &#x3bc;m.

Method for manufacturing at least one optoelectronic semiconductor chip

A component with a semiconductor body, a first metal layer and a second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer. The semiconductor body has a first semiconductor layer, a second semiconductor layer, and an active layer. The component has a plated-through hole, which extends through the second semiconductor layer and the active layer for the electrical contacting of the first semiconductor layer. The second metal layer has a first subregion, and a second subregion, spaced apart laterally from the first subregion by an intermediate space. The first subregion is electrically connected to the plated-through hole and is assigned to a first electrical polarity of the component. In plan view, the first metal layer laterally completely bridges the intermediate space and is assigned to a second electrical polarity of the component which differs from the first electrical polarity.

Optoelectronic semiconductor component and method for producing the same

A method for producing a plurality of optoelectronic semiconductor components () is provided, comprising the following steps: a) providing an auxiliary carrier (); b) providing a plurality of semiconductor chips (), wherein each of the semiconductor chips has a carrier body () and a semiconductor body () arranged on an upper side () of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (); f) removing the auxiliary carrier (); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components ().

Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

A component includes a semiconductor body, a carrier, and a stabilization layer arranged between the semiconductor body and the carrier in the vertical direction. The semiconductor body has a first semiconductor layer facing away from the carrier, a second semiconductor layer facing the carrier, and an active layer arranged between the first semiconductor layer and the second semiconductor layer. The carrier has a first via and a second via laterally spaced apart from the first via by means of an intermediate region. The first via is connected to the first semiconductor layer in an electrically conductive manner and the second via is connected to the second semiconductor layer in an electrically conductive manner. The stabilization layer is continuous, overlaps with the vias in a top view, and laterally bridges the intermediate region. The stabilization layer is electrically insulated from the vias and from the semiconductor body.

Component and metod for producing a component

The invention relates to a method for producing an optoelectronic semiconductor chip (). A semiconductor layer sequence () is provided, comprising a first semiconductor layer () and a second semiconductor layer (). Furthermore, a first contact layer () is provided which extends laterally along the first semiconductor layer () and electrically contacts same. A third semiconductor layer () is applied onto a first contact layer () face facing away from the semiconductor layer sequence (). A recess () is formed which extends through the third semiconductor layer (), the first contact layer (), and the first semiconductor layer () into the second semiconductor layer (). A passivation layer () is applied onto a third semiconductor layer () face facing away from the semiconductor layer sequence (). At least one first () and at least one second passage opening () are formed in the passivation layer (). A second contact layer () is applied which electrically contacts the second semiconductor layer () in the region of the at least one first passage opening () and the third semiconductor layer () in the region of the at least one second passage opening (). The invention additionally relates to an optoelectronic semiconductor chip ().

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

A component with a semiconductor body, and first and second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer, the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, the component has a through-connection, which extends through the second semiconductor layer and the active layer for the electrical bonding of the first semiconductor layer. The second metal layer has a first subregion electrically connected to the through-connection by the first metal layer, and a second subregion spaced apart laterally from the first subregion by an intermediate space. In an overhead view, the first metal layer laterally completely covers the intermediate space.

Component and method for producing a component

A method of producing a plurality of optoelectronic semiconductor chips includes a) providing a layer composite assembly having a principal plane which delimits the layer composite assembly in a vertical direction, and includes a semiconductor layer sequence having an active region that generates and/or detects radiation, wherein a plurality of recesses extending from the principal plane in a direction of the active region are formed in the layer composite assembly; b) forming a planarization layer on the principal plane such that the recesses are at least partly filled with material of the planarization layer; c) at least regionally removing material of the planarization layer to level the planarization layer; and d) completing the semiconductor chips, wherein for each semiconductor chip at least one semiconductor body emerges from the semiconductor layer sequence.

Growing community of inventors

Alteglofsheim, Germany

Lutz Hoeppel