Infineon Technologies Americas Corp.

Luther-King Ngwendson

Rajeev Krishna Vytla

Russell Turner

Nicholas Limburn

An edge termination structure is disclosed. The edge termination structure includes an active cell in a semiconductor wafer, an edge termination region adjacent the active cell in the semiconductor wafer, where the edge termination region includes a recessed field oxide region and a termination charge region below the recessed field oxide region. The recessed field oxide region may be thermally grown in a recess in the semiconductor wafer. A top surface of the recessed field oxide region is substantially coplanar with a top surface of the semiconductor wafer. The active cell may include at least one insulated-gate bipolar transistor surrounded by the edge termination region in the semiconductor wafer. The termination charge region has a conductivity type opposite of that of the semiconductor wafer. The termination charge region is adjacent to at least one guard ring in the semiconductor wafer.

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Newport, United Kingdom

Luther-King Ngwendson