Agency for Science, Technology and Research

National University of Singapore

Luping Shi

Tow Chong Chong

Wendong Song

Rong Zhao

Yee Chia Yeo

Minghua Li

Weiwei Lina Fang

Xiangshui Miao

Kok Leong Desmond Loke

Zengbo Wang

Weijie Wang

Yun Fook Thomas Liew

A method for programming a resistive memory cell is provided. The method may include providing a programming signal to the resistive memory cell. The programming signal may include an electrical pulse and a bias pulse coupled with the electrical pulse. The electrical pulse includes an electrical pulse portion, and the bias pulse includes at least two bias pulse portions, wherein the electrical pulse portion is positioned between the at least two bias pulse portions. The bias pulse includes a voltage below a threshold switching voltage of the resistive memory cell. The programming signal includes a peak voltage above the threshold switching voltage of the resistive memory cell.

Method for programming a resistive memory cell, a method and a memory apparatus for programming one or more resistive memory cells in a memory array

A diode and a memory device having a diode are provided. The diode includes a semiconductor layer and phase change material layer. The semiconductor layer and the phase change material layer have different energy bandgaps and different carrier concentrations such that an isotype heterojunction is formed at a boundary interface between the semiconductor layer and the phase change material layer.

Diode and memory device having a diode

According to embodiments of the present invention, a memory component is provided. The memory component includes a storage component comprising a resistance changing material; and an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide, wherein the memory component is free of a metal layer between the storage component and the electrical contact, and wherein the electrical contact is free of a metal layer.

Memory component having an electrical contact free of a metal layer

The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.

Phase change magnetic material

A medium for use in data storage, thermal energy storage and other applications, the medium comprising a functional layer made of different materials. One embodiment provides a data storage medium. The data storage medium comprises a substrate and a data storage layer supported by the substrate. The data storage layer comprises a plurality of regions each capable of representing a digital value. The data storage layer is at least partly made of a first material and a second material different from the first material. The data storage layer comprises a pattern of discrete portions made of the second material lying in a plane defined by the data storage layer. The pattern is configured such that each region representing a digital value contains a portion made of the first material and at least one of the discrete portions made of the second material. Other embodiments provide a thermal energy storage medium and a sensing medium.

Growing community of inventors

Singapore, Singapore

Luping Shi