Boe Technology Group Co., Ltd.

Other

Lung Pao Hsin

Chunsheng Jiang

Wei Liu

Jun Cheng

Meili Wang

Fengjuan Liu

Xiangyong Kong

Chang Yen Wu

Chin Lung Liao

Junjie Lin

Kelvin Chiang

An organic electroluminescent display device and a manufacturing method thereof are disclosed. The organic electroluminescent display device includes a substrate, a first thin film transistor disposed on the substrate, a second thin film transistor disposed on the first thin film transistor, a first light emitting element electrically connected with a drain of the first thin film transistor, wherein the first light emitting element comprises a first electrode, a first light emitting layer and a second electrode which are stacked, a second light emitting element electrically connected with a drain of the second thin film transistor, wherein the second light emitting element is disposed on the second thin film transistor and comprises a third electrode, a second light emitting layer and a fourth electrode, wherein the second light emitting element is configured to emit white light. By forming the second light emitting element on the second thin film transistor, an original non-display region of the organic electroluminescent display device becomes a display region, as a result, an aperture ratio of the organic electroluminescent display device is increased, and the display effect of the organic electroluminescent display device is improved.

Organic electroluminescent display device and manufacturing method thereof

The present invention provides an organic light emitting diode (OLED) display array substrate, a manufacturing method of the same OLED structure and a display apparatus. The OLED array substrate includes a plurality of pixels arranged in an array on a base substrate. Further, each pixel comprises a first sub-pixel and a second sub-pixel displaying different colors. Each sub-pixel comprises a light emitting unit and a control circuit. In addition, an orthogonal projection of the light emitting unit of the first sub-pixel on the base substrate overlaps with an orthogonal projection of the control circuit of the second sub-pixel on the base substrate. According to the OLED display structure of the present disclosure, the region occupied by the control circuit of a second sub-pixel is used to set up the light emitting unit of the first sub-pixel. This can increase the display surface area occupied by the light emitting units in each pixel, thus improve the resolution of the display.

Organic light-emitting diode (OLED) array substrate, method of manufactering the same, and related display apparatus

Embodiments of the present invention relate to a display substrate and fabricating method thereof and a display device. The display substrate comprises a plurality of pixel groups, wherein each of said pixel groups comprises a plurality of color sub-pixels and a plurality of white sub-pixels. A first driving transistor is provided in a light emitting layer missing region of the color sub-pixel, for driving the color sub-pixel. A second driving transistor and a white sub-pixel are provided on the first driving transistor, the second driving transistor for driving the white sub-pixel. According to the technical solution, white light OLED display may be implemented by forming the white sub-pixel and the driving transistor thereof on the driving transistor of the color sub-pixel, while making use of the space on the thickness dimension of the color sub-pixel, so that the light emitting layer missing region in the color sub-pixel is fully utilized.

Display substrate and fabricating method thereof, and display device

A thin film transistor, a manufacturing method thereof, an array substrate and a display apparatus are disclosed. The manufacturing method includes forming a gate electrode (), a gate insulating layer (), an active region (), a source electrode () and a drain electrode () on a base substrate () with the active region being formed of ZnON material, and implanting the active region () with nitrogen ion while it being formed, so as to make the sub-threshold swing amplitude of the thin film transistor less than or equal to 0.5 mV/dec. The manufacturing method reduces the sub-threshold swing amplitude of the thin film transistor and improves the semiconductor characteristics of the thin film transistor.

Thin film transistor, manufacturing method thereof, array substrate and display apparatus

Embodiments of the present disclosure provide an array substrate and a manufacturing method thereof, and a display device. The array substrate includes a base substrate, a first electrode pattern, a second electrode pattern, and an active layer pattern disposed on the base substrate, a first electrode protection pattern coating the first electrode pattern, and a second electrode protection pattern coating the second electrode pattern. The active layer pattern is disposed between the first electrode pattern and the second electrode pattern. The first electrode protection pattern and the second electrode protection pattern are connected to two sides of the active layer pattern, respectively. The problem that, the active layer pattern cannot be connected to the first electrode pattern and the second electrode pattern due to the surface oxidation, when the first electrode pattern and the second electrode pattern adopt material with low resistance characteristic, is avoided, thus increasing the product yield.

Array substrate and manufacturing method thereof, and display device

A thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The thin film transistor includes: an active layer, a source-drain metal layer and a diffusion blocking layer located between the active layer and the source-drain metal layer, wherein, the source-drain metal layer includes a source electrode and a drain electrode; the diffusion blocking layer includes a source blocking part corresponding to a position of the source electrode and a drain blocking part corresponding to a position of the drain electrode; and the diffusion blocking layer is doped with different concentrations of nitrogen from a side close to the source-drain metal layer to a side close to the active layer.

Thin film transistor including diffusion blocking layer and fabrication method thereof, array substrate and display device

Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.

Thin film transistor display device with zinc nitride ohmic contact layer

A thin film transistor and a fabrication method thereof, an array substrate and a display panel are provided. The thin film transistor includes: a gate electrode (), a source electrode () and a drain electrode () disposed in a same layer on a base substrate (); a gate insulating layer () disposed on the gate electrode (), the source electrode () and the drain electrode (); an active layer () disposed on the gate insulating layer (); a passivation layer () disposed on the active layer () and the gate insulating layer (). A first via hole () and a second via hole () are disposed in the passivation layer (); a third via hole () and a fourth via hole () are disposed in the passivation layer () and the gate insulating layer (); a first connection pattern () and a second connection pattern () are disposed on the passivation layer (); the first connection pattern () is connected with the active layer () and the source electrode () through the first via hole () and the third via hole () respectively; the second connection pattern () is connected with the active layer () and the drain electrode () through the second via hole () and the fourth via hole () respectively. The thin film transistor effectively reduces the influence of the parasitic capacitance between the source electrode and the gate electrode and the parasitic capacitance between the drain electrode and the gate electrode on the thin film transistor.

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Beijing, China

Lung Pao Hsin