Taiwan Semiconductor Manufacturing Comp. Ltd.

Lun-Wei Chang

Tomonari Yamamoto

Yun-Ju Sun

A semiconductor device and method of fabricating thereof is described that includes a substrate including at least one fin, at least one gate stack formed on a top surface of the at least one fin, a first inter-layer dielectric (ILD) layer formed on the top surface of the at least one fin, and a strained layer formed at least on a top surface of the at least one gate stack, wherein the strained layer is configured to provide a strain force to the at least one gate stack.

Growing community of inventors

Hsin-Chu, Taiwan

Lun-Wei Chang