Huazhong University of Science and Technology

Lun Wang

Xiangshui Miao

Hao Tong

Jiangxi Chen

Weiguo Wang

A selector with a superlattice-like structure and a preparation method thereof are provided, which belong to the technical field of micro-nano electronics. The selector includes a substrate, and a first metal electrode layer, a superlattice-like layer, and a second metal electrode layer sequentially stacked on the substrate. The superlattice-like layer includes n+1 first sublayers and n second sublayers alternately stacked periodically. A material of the first sublayer is amorphous carbon, and a material of the second sublayer is a chalcogenide with gating property.

Selector with superlattice-like structure and preparation method thereof

The disclosure belongs to the field of micro-nano electronic materials, and in particular to a Se-based selector material, a selector unit, and a preparation method thereof. The Se-based selector material is a compound including Ge, Se, and B elements. The chemical formula of the Se-based selector material is (GeSe)BM, in which the M element is at least one of In, Ga, Al, and Zn, and 0.1≤x≤0.9, 0.02≤y≤0.15, and 0≤z≤0.2. The problems of safety and stability of the existing material selection for the selector are solved by the selector material, the selector unit, and the preparation method thereof provided by the disclosure. In addition, the threshold voltage of the selector device prepared based on the Se-based selector material is adjustable, and the comprehensive performance is good.

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Hubei, China

Lun Wang