Tcl Technology Group Corporation

Luling Cheng

Yixing Yang

Method for preparing nanocrystals with a core-shell structure is provided. The method includes: providing quantum dot cores; and performing N growth processes of shell layers on a quantum dot core to form a nanocrystal with a core-shell structure. A shell source includes a shell source cation precursor and a shell source anion precursor, and the shell source cation precursor is a metal organic carboxylate. The N growth processes include one or more groups of M growth processes of adjacent shell layers, where N and M are positive integers, N≥2 and N/3≤M≤N−1. Before and/or after performing each group of the M growth processes of adjacent shell layers, one of organic amine and organic carboxylic acid is mixed into a shell-layer-growth-reaction-system after a previous shell layer has formed, to form a mixed system to heat. A subsequent shell layer is grown over the previous shell layer.

Method for preparing nanocrystal with core-shell structure

The present application discloses a method for preparing metal oxide nanoparticles, including the following steps: providing an organic reagent with a molecular formula of X—(SO)—Y and a metal oxide nanoparticle sample, in which the metal oxide nanoparticle sample is an aqueous metal oxide nanoparticle; in X—(SO)—Y, X contains polar functional groups; mixing the organic reagent and the metal oxide nanoparticle sample in a liquid medium and adding an alkaline reagent to a mixed solution of the organic reagent and the metal oxide nanoparticle sample to prepare the metal oxide nanoparticles. The method provided in the present application can reduce the surface defect state of metal oxide nanoparticles, thereby improving the stability of metal oxide nanoparticles.

Metal oxide nanoparticles and preparation method thereof, quantum dot light-emitting diode

A thin film includes a polymer material and quantum dots (QDs). The QDs are dispersed in the polymer material. The polymer material includes at least one barrier polymer material. A weight average molecular weight of the at least one barrier polymer material is higher than 100,000.

Thin film and fabrication method therefor and QLED device

The present application discloses a preparation method for quantum dots (QDs). The method includes providing initial QD cores, and mixing the initial QD cores with an organic carboxylic acid to bond the organic carboxylic acid to the surface of the initial QD cores; preparing a shell layer on the surface of the initial QD cores in a shell-growth reaction system containing an organic carboxylic acid; and mixing and heating the solution system, obtained after a completion of shell-layer growth reaction, with an organic amine, an organic phosphine, or a mixed solution of the organic amine and the organic phosphine.

Preparation method for quantum dots

A preparation method for a metal oxide nanoparticle film and an electrical component, comprising: preparing a halogen ligand-containing metal oxide nanoparticle by performing heated alcoholysis of a metal halide in an organic alcohol; and employing a solution method on the halogen ligand-containing metal oxide nanoparticle to prepare a halogen ligand-containing metal oxide nanoparticle film. The halogen ligand-containing metal oxide nanoparticle is produced by means of performing the alcoholysis of the metal halide, then the halogen ligand-containing metal oxide nanoparticle is prepared into the film, and then a halogen is utilized once again in a passivation processing of the film, this not only further reduces defects on the surface of the metal oxide nanoparticle, but also further improves charge transfer between the metal oxide nanoparticle and an active functional layer and increases transfer efficiency, thus increasing component efficiency.

Preparation method for metal oxide nanoparticle film and electrical component

Disclosed are quantum dot solid-state film, method for preparing same, and quantum dot light-emitting diode. Method comprises: providing quantum dot solution, preparing quantum dot material solid-state film on substrate; before being immersed in surface modifier solution to obtain quantum dot material solid-state film modified by a surface modifier; providing a metal nanoparticle seed solution, using solution method to deposit nanoparticle on quantum dot material solid-state film modified by surface modifier to obtain a quantum dot material solid-state film with the surface having adsorbed a layer of metal nanoparticle seed; before being immersed in a metal nano wire precursor solution, nanoparticle to perform a metal nano wire growth, finally obtaining a quantum dot solid-state film. The quantum dot solid-state film obtained using method of invention can effectively and rapidly transmit electrical charges, improving overall performance of device.

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Huizhou, China

Luling Cheng