Abb Schweiz Ag

Lulian Nistor

Florin Udrea

Munaf Rahimo

Martin Arnold

Jan Vobecky

Umamaheswara Vemulapati

Neophythos Lophitis

A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w'), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w&#x2032;) of each one of the two outer cathode layer regions next to a diode cell neighboring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

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Niederweningen, Switzerland

Lulian Nistor