National Technology & Engineering Solutions of Sandia, LLC

University of Virginia Patent Foundation

Luke Yates

Andrew A Allerman

Jon Ihlefeld

Jeffrey Steinfeldt

Patrick Edward Hopkins

Thomas Edwin Beechem, Iii

Robert Kaplar

Khalid Mikhiel Hattar

Jack David Flicker

Andrew Armstrong

Andrew Binder

Gregory W Pickrell

Mary H Crawford

Jeramy R Dickerson

Edward S Piekos

Brendan P Gunning

Michael L Smith

Douglas L Medlin

Vincent M Abate

A vertical gallium nitride (GaN) PN diode uses epitaxial growth of a thick drift region with a very low carrier concentration and a carefully designed multi-zone junction termination extension to achieve high voltage blocking and high-power efficiency. An exemplary large area (1 mm) diode had a forward pulsed current of 3.5 A, an 8.3 mΩ-cmspecific on-resistance, and a 5.3 kV reverse breakdown. A smaller area diode (0.063 mm) was capable of 6.4 kV breakdown with a specific on-resistance of 10.2 mΩ-cm, when accounting for current spreading through the drift region at a 45° angle.

High voltage gallium nitride vertical PN diode

Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.

Ion-implanted thermal barrier

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Luke Yates