Finisar Corporation

Ii-vi Delaware, Inc.

Luke A Graham

Deepa Gazula

Sonia Quadery

Andy MacInnes

Haiquan Yang

James Kenneth Guenter

Ralph Herbert Johnson

Andy Macinnes

A non-planarized VCSEL can include: a blocking region over or under an active region, the blocking region having a first thickness; one or more conductive channel cores in the blocking region, the one or more conductive channel cores having a second thickness that is larger than the first thickness, wherein the blocking region is defined by having an implant and the one or more conductive channel cores are devoid of the implant, wherein the blocking region is lateral the one or more conductive channel cores, the blocking region and one or more conductive channel cores being an isolation region; and a non-planarized semiconductor region of one or more non-planarized semiconductor layers over the isolation region. The VCSEL can include a planarized bottom mirror region below the active region and a non-planarized top mirror region above the isolation region, or a non-planarized bottom mirror region below the active region.

Implant regrowth VCSEL and VCSEL array with heterogeneous combination of different VCSEL types

An etched planarized VCSEL includes: an active region; a blocking region over the active region, and defining apertures therein; and conductive channel cores in the apertures, wherein the conductive channel cores and blocking region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the blocking region over the active region; etching the apertures in the blocking region; and forming the conductive channel cores in the apertures of the blocking region. Another etched planarized VCSEL includes: an active region; a conductive region over the active region, and defining apertures therein; and blocking cores in the apertures, wherein the blocking cores and conductive region form an isolation region. A method of making the VCSEL includes: forming the active region; forming the conductive region over the active region; etching the apertures in the conductive region; and forming the blocking cores in the apertures of the conductive region.

Etched planarized VCSEL

A VCSEL can include a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region. The VCSEL can also include a graphene electrode electronically coupled with at least one graphene region. The VCSEL can also include a contact region adjacent with at least one dielectric region. The VCSEL can also include a contact electrode electronically coupled with the contact region. The VCSEL can also include a base electrode electronically coupled with a base of a semiconductor region of the VCSEL. The graphene intra-cavity absorber can include at least two graphene regions sandwiching at least one dielectric region therebetween.

VCSEL with integrated electrically modulated intra-cavity graphene absorber

Growing community of inventors

Allen, TX, United States of America

Luke A Graham