Asml Netherlands B.v.

Lukasz Jerzy Macht

Frank Staals

Patrick Warnaar

Arie Jeffrey Den Boef

Joost Jeroen Ottens

Johannes Henricus Wilhelmus Jacobs

Engelbertus Antonius Fransiscus Van Der Pasch

Emiel Jozef Melanie Eussen

Erik Willem Bogaart

William Peter Van Drent

Jozef Petrus Henricus Benschop

Ralph Brinkhof

Mohammadreza Hajiahmadi

Simon Philip Spencer Hastings

Alberto Da Costa Assafrao

Laurent Khuat Duy

Maurits Van Der Schaar

Martin Jacobus Johan Jak

Hendrik Jan Hidde Smilde

Willem Jurrianus Venema

Murat Bozkurt

Grzegorz Grzela

Sergei Sokolov

Erik Johan Koop

Martinus Cornelis Reijnen

Hilko Dirk Bos

Karel Hendrik Wouter Van Den Bos

Lucas Tijn Kunneman

Dimitra Sarri

Techniques for determining a value of a parameter of interest of a patterning process are described. One such technique involves obtaining a plurality of calibration data units from one or more targets in a metrology process. Each calibration data unit of at least two of the calibration data units represents detected radiation obtained using different respective polarization settings in the metrology process, each polarization setting defining a polarization property of incident radiation of the metrology process and of detected radiation of the metrology process. The calibration data units are used to obtain calibration information about the metrology process. A measurement data unit representing detected radiation scattered from a further target is obtained, the further target having a structure formed using the patterning process on the substrate or on a further substrate. A value of the parameter of interest is determined using the measurement data unit and the obtained calibration information.

Method of determining a value of a parameter of interest of a patterning process, device manufacturing method

An inspection apparatus () measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p&#x2212;, p, p+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (, Q, A) observed in the different variants.

Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method

An overlay metrology target () contains a plurality of overlay gratings (-) formed by lithography. First diffraction signals (()) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (()) are obtained from the target, and second asymmetry values (As') are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.

An inspection apparatus () measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1&#x2212;, p1, p1+; &#x3bb;1&#x2212;, &#x3bb;1, &#x3bb;1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (, Q, A) observed in the different variants.

A lithographic apparatus including a substrate table position measurement system and a projection system position measurement system to measure a position of the substrate table and the projection system, respectively. The substrate table position measurement system includes a substrate table reference element mounted on the substrate table and a first sensor head. The substrate table reference element extends in a measurement plane substantially parallel to the holding plane of a substrate on substrate table. The holding plane is arranged at one side of the measurement plane and the first sensor head is arranged at an opposite side of the measurement plane. The projection system position measurement system includes one or more projection system reference elements and a sensor assembly. The sensor head and the sensor assembly or the associated projection system measurement elements are mounted on a sensor frame.

Lithographic apparatus

The invention provides a level sensor configured to determine a height level of a surface of a substrate, comprising a detection unit arranged to receive a measurement beam after reflection on the substrate, wherein the detection unit comprises an array of detection elements, wherein each detection element is arranged to receive a part of the measurement beam reflected on a measurement subarea of the measurement area, and is configured to provide a measurement signal based on the part of the measurement beam received by the respective detection element, and wherein the processing unit is configured to calculate, in dependence of a selected resolution at the measurement subarea, a height level of the measurement subarea, or to calculate a height level of a combination of multiple measurement subareas.

Level sensor, a method for determining a height map of a substrate using a selected resolution, and a lithographic apparatus

A level sensor arrangement is useable for measuring a height of a surface of a substrate in a lithographic apparatus. The level sensor arrangement is provided with a light source emitting detection radiation towards the substrate, and a detector unit for measuring radiation reflected from the substrate in operation. The light source is arranged to emit detection radiation in a wavelength range in which a resist to be used for processing the substrate in the lithographic apparatus is sensitive.

Level sensor arrangement for lithographic apparatus and device manufacturing method

A level sensor for measuring a position of a surface of a substrate includes a projection unit including an emitter for emitting a radiation beam towards the substrate and a projection grating including a measurement grating and an aperture, such that the radiation beam incident on the projection grating is divided into a measurement radiation beam and a capture radiation beam. The level sensor further includes a detection unit including a first and second measurement detector, a first and second capture detector, a detection grating, and a first and second optical unit. The detection grating includes a ruled grating with multiple rules, which direct radiation towards the first and second measurement detector via the first and second optical unit, and a capture element directing radiation towards the first and second capture detector via the first and second optical unit.

Level sensor, lithographic apparatus, and substrate surface positioning method

The invention provides a level sensor configured to determine a height level of a surface of a substrate supported on a movable substrate support, the level sensor including multiple projection units, multiple detection units, and a processing unit to calculate a height level for each of a plurality of measurement locations on the basis of the measurement beams from the projection units, wherein the level sensor is configured to measure height levels simultaneously at multiple measurement locations on the substrate, wherein the substrate support is configured to move the substrate in a first direction substantially parallel to the surface of the substrate to measure a height level at different locations on the substrate, and wherein at least part of the multiple measurement locations are at least spaced in a second direction that is substantially parallel to the surface of the substrate and perpendicular to the first direction.

Lithographic apparatus and device manufacturing method involving a level sensor having multiple projection units and detection units

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Eindhoven, Netherlands

Lukasz Jerzy Macht