Wolfspeed, Inc.

Lukas Nattermann

Curt Progl

Valeri Fedorovich Tsvetkov

Robert Tyler Leonard

Adrian Powell

Simon Bubel

Yuri Khlebnikov

Matthew David Conrad

Elif Balkas

Caleb A Kent

Steven Griffiths

Michael J Paisley

Varad R Sakhalkar

Oleksandr Kramarenko

Eugene Deyneka

Alexander Kevin Shveyd

Kathy Doverspike

Michael Fusco

Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Large dimension silicon carbide single crystalline materials with reduced crystallographic stress

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Chapel Hill, NC, United States of America

Lukas Nattermann