Basf Se Corporation

Wayne State University

Other

Lukas Mayr

David Dominique Schweinfurth

Charles H Winter

Sabine Weiguny

Sinja Verena Klenk

Nilanka Weerathunga Sirikkathuge

Kyle Blakeney

Tharindu Malawara Arachchige Nimanthaka Karunaratne

Daniel Waldmann

Kinga Izabela Leszczynska

David Scheschkewitz

Maraike Ahlf

Tharindu Karunaratne

Charles Hartger Winter

The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate in contact with a compound of general formula (I), (II), or (III) in the gaseous state (I) (II) (III) wherein A is NR, NR, PR, PR, O, OR, S, or SR, E is N, NR, P, PR, O or S, n is 1, 2, or 3, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group and R' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, and A, E, and n are chosen such that the compound of general formula (I), (II), or (III) is electronically neutral.

Process for the generation of metal- or semimetal-containing films

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NRor OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n is 0, 1 or 2, m is 0, 1 or 2, andR' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

Process for the generation of metal-containing films

The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with compound of general formula (II), (III), or (IV), wherein E is Ge or Sn, R is an alkyl group, an alkenyl group, an aryl group, or a silyl group, R' are an alkyl group, an alkenyl group, an aryl group, or a silyl group, X is nothing, hydrogen, a halide, an alkyl group, an alkylene group, an aryl group, an alkoxy group, an aryl oxy group, an amino group, or a amidinate group, or an guanidinate group, L is an alkyl group, an alkenyl group, an aryl group, or a silyl group. 

Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state 

The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: 

Aluminum precursor and process for the generation of metal-containing films

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NRor OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n isor, m isor, andR' is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R, R, R, R, and Ris hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R, R, R, R, and Rare hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2. 

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Ludwigshafen, Germany

Lukas Mayr