Siltectra Gmbh

Harvard College

Lukas Lichtensteiger

Wolfram Drescher

Jan Richter

Christian Pfeffer

Anas Ajaj

Hau-Kit Man

A method of splitting a semiconductor wafer includes: inducing a first stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a first radiation process; inducing a second stress distribution in the semiconductor wafer by exposing the semiconductor wafer to a second radiation process, the second radiation process including applying laser energy to an edge of the semiconductor wafer; and splitting the semiconductor wafer after inducing the first stress distribution and the second stress distribution.

Method of producing stresses in a semiconductor wafer

The present invention relates to a method for the production of layers of solid material, in particular for use as wafers. The method may include the following steps: providing a workpiece for the separation of the layers of solid material with the workpiece optionally having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material having the carrier unit optionally having a receiving layer for holding the layer of solid material, attaching the receiving layer to the exposed surface of the workpiece forming a composite structure, producing a break initiation point by means of pre-defined local stress induction in the peripheral region, including at the edge, of the workpiece, and separating the layer of solid material from the workpiece starting from the break initiation point.

Method and device for the production of wafers with a pre-defined break initiation point

The invention relates to a method of producing at least one layer of solid material. This method comprises at the very least the steps of: providing a carrier substrate with a first exposed surface and with a second exposed surface; producing a detachment layer in the carrier substrate or over the first exposed surface of the carrier substrate, the detachment layer having an exposed surface; producing the first layer of solid material over the exposed surface of the detachment layer, the first layer of solid material having a free surface spaced apart from the detachment layer; positioning or forming a receiving layer on the second exposed surface of the carrier substrate or on the free surface of the first layer of solid material; generating stresses within the detachment layer, the stresses being generated by tempering at least the receiving layer, a crack propagating within the detachment layer or in the boundary region between the detachment layer and the first layer of solid material as a result of the stresses, the first layer of solid material being split off from the previously produced multi-layer arrangement by the crack.

Method of producing large-scale layers of solid material

The invention relates to a method for the production of layers of solid material, in particular for use as wafers, comprising the following steps: providing a workpiece for the separation of layers of solid material, the workpiece having at least one exposed surface, producing and/or providing a carrier unit for receiving at least one layer of solid material, the carrier unit being made in a number of layers, the carrier unit having a stabilisation layer and the stabilisation layer being overlapped at least partially by a receiving layer, the receiving layer being made to hold the layer of solid material, and the stabilisation layer being formed, at least partially, such that it has an E modulus that is greater than the E modulus of the receiving layer, connecting the receiving layer to the exposed surface of the workpiece, thus forming a composite structure, exposing the composite structure to an inner and/or outer stress field such that the layer of solid material is separated along a plane of the workpiece extending within the workpiece.

Method for the production of a wafer with a carrier unit

A method of printing comprises the steps of: providing a solid state material having an exposed surface; applying an auxiliary layer to the exposed surface to form a composite structure, the auxiliary layer having a stress pattern; subjecting the composite structure to conditions facilitating fracture of the solid state material along a plane at a depth therein; and removing the auxiliary layer and, therewith, a layer of the solid state material terminating at the fracture depth, wherein an exposed surface of the removed layer of solid state material has a surface topology corresponding to the stress pattern.

Method for producing thin, free-standing layers of solid state materials with structured surfaces

In a method for producing a free-standing solid state layer, a solid state material is provided having at least one surface available for layer formation thereon and a layer of polymer is formed on the available surface. The solid state material and polymer layer are then exposed to a change in local temperature from a first temperature that is no greater than about 300&#xb0; C. to a second temperature below about room temperature to cause the solid state material to fracture along a plane at a depth in the material, to produce at least one free-standing solid state layer from the solid state material.

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Zurich, Switzerland

Lukas Lichtensteiger