Seagate Technology Incorporated

Lujun Chen

Juan Jose Fernandez-de-Castro

Sining Mao

James H Giusti

Erli Chen

Dimitar Velikov Dimitrov

Alexander Mikhailovich Shukh

Jian Chen

Douglas A Saunders

Ananth Naman

Philip A Seekell

The present invention is directed to a spin valve sensor for use in a data storage system, that is adapted to receive a sense current and produce a GMR effect in response to applied magnetic fields. The spin valve sensor includes first and second ferromagnetic free layers, a spacer layer positioned between the first and second ferromagnetic free layers, and a biasing component. The first ferromagnetic free layer has a magnetization (M) in a first direction, when in a quiescent (non-biased) state. The second ferromagnetic free layer has a magnetization (M) in a second direction that is anti-parallel to the first direction, when in a quiescent (non biased) state.

Giant magnetoresistive sensor having selfconsistent demagnetization fields

A spin valve sensor for use with a data storage system includes free and pinned ferromagnetic (FM) layers, a conducting layer therebetween, contact leads, free layer biasing elements, and an anti-ferromagnetic (AFM) layer. The pinned layer has opposing ends, which define a width of an active region of the spin valve sensor having a giant magnetoresistive effect in response to applied magnetic fields. The free layer is positioned below the pinned layer and has opposing ends that extend beyond the active region. The contact leads abut the pinned layer and overlay portions of the conducting layer. The free layer biasing elements abut the ends of the free layer and bias a magnetization of the free layer in a longitudinal direction.

Spin valve sensor

A magnetoresistive (MR) sensor for use in a magnetic storage system including a magnetic storage media having multiple concentric microtracks with information stored thereon. The MR sensor includes a plurality of generally parallel layers that form an MR stack. The MR sensor also includes a top shield and a bottom shield that are spaced apart on opposite sides of the MR stack in a longitudinal direction. The Mr sensor further includes a first and a second side shield spaced apart on opposite sides of the MR stack in a transverse direction. The top shield, bottom shield, first side shield and second side shield substantially surround the MR stack.

MR structures for high areal density reader by using side shields

Side-reading of an abutted-junction magnetic transducer is measured by constructing at least one microtrack having a transition density. The transducer is moved relative to the microtrack to identify a plurality of positions of the transducer relative to the microtrack where the transducer provides a predetermined response. The side-reading distance of the transducer is identified from the plurality of positions. In one embodiment, a plurality of microtracks are constructed during different iterations, each having a different transition density, and the positions of the transducer are identified during each iteration relative to the respective microtrack. In another embodiment, the selected transition density has a fundamental frequency, and the position of the transducer is identified relative to the microtrack where the transducer provides the predetermined response at each of a plurality of harmonic frequencies of the fundamental frequency.

Process of measuring slide-reading of abutted-junction read heads

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West Hills, CA, United States of America

Lujun Chen