Jozef Stefan Institute

Universidad De Barcelona

Faculdade De Ciencias E Tecnologia Da Universidade Nova De Lisboa

Faculdad De Ciencias E Tecnologia Da Universidad Nova De Lisboa

Universidade Nova De Lisboa

Faculdade De Ciências E Tecnologia/ Universidade Nova De Lisboa

Raiz - Instituto De Investigação Da Floresta E Papel

The Navigator Company, S.a.

Luís Miguel Nunes Pereira

Elvira Maria Correia Fortunato

Rodrigo Ferrão De Paiva Martins

Pedro Miguel Cândido Barquinha

Nuno Filipe De Oliveira Correia

Danjela Kuscer Hrovatin

Marija Kosec

Gonçalo Pedro Gonçalves

Paula Cristina De Oliveira Rodrigues Pinto

Ricardo Jorge Alves Ramos Rodrigues

Antonio Paulo Mendes De Sousa

Jorge Filipe Da Silva Pedrosa

Rodrigo FERRÃO Paiva Martins

Pedro Miguel CÂNDIDO Barquinha

Gonçalo Pedro GONÇALVES

The present invention refers to the use and creation of materials based on natural cellulose fibbers, synthetic fibbers, or mixed fibbers as physical support and storing medium or storage inducer of electrical and ionic charges in self-sustaining discrete or complementary field-effect transistors with non-volatile memory by using organic or inorganic active semiconductors for the manufacture of the channel regions that are deposited on the fibbers of the paper material as well as metals or passive semiconductors for manufacturing drain and source allowing the interconnection of fibbers, in addition to the gate electrode contact existing on the other side-face of the paper, p or n type respectively, in monolithic or hybrid forms.

Process for using and producing paper based on natural cellulose fibers, synthetic fibers or mixed fibers as physical support and storing medium for electrical charges in self-sustaining field-effect transistors with memory using active semiconductor oxides

High performance thin-film, transistors are entirely processed at temperatures not exceeding 150&#xb0; C., using amorphous multi component dielectrics based on the mixture of high band gap and high dielectric constant (K) materials. The sputtered or ink jet printed mixed dielectric materials such as TaOwith SiOor AlOor HfOwith SiOor AlOare used. These multicomponent dielectrics allow producing amorphous dielectrics to be introduced in high stable electronic devices with low leakage currents, while preserving a high dielectric constant. This results in producing thin film transistors with remarkable electrical properties, such as the ones produced based on Ga&#x2014;In&#x2014;Zn oxide as channel layers and where the dielectric was the combination of the mixture TaO:SiO, exhibiting field-effect mobility exceeding 35 cmVs, close to 0 V turn-on voltage, on/off ratio higher than 10and subthreshold slope below 0.24 V dec.

Amorphous multicomponent dielectric based on the mixture of high band gap and high K materials, respective devices and manufacture

Growing community of inventors

Amora, Portugal

Luís Miguel Nunes Pereira