Trw Limited

Northrop Grumman Systems Corporation

Luis M Rochin

Dean Tran

John Joseph Berenz

Edward A Rezek

Eric R Anderson

Ronald A DePace

Ronald L Strijek

Thomas J Roth

Mark Kintis

Steven J Mass

Thomas Taoming Chung

Alan Hirschberg

Ha K DeMarco

Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.

Eutectic bonding of ultrathin semiconductors

A method of making a micro-miniature switch device ( ), which has at least one member ( ) movable relative to a substrate ( ) upon which the device is provided, includes providing a layer of sacrificial non-photolithography material upon a stratum connected to the substrate. A template is provided via photolithographing step that uses a photoresist material upon a stratum connected to the substrate. A layer is provided to include at least a portion of the movable member. The photoresist material and the sacrificial non-photolithography material are removed using photoresist developer. Preferably, at least two photolithography process steps utilize a single photolithographic mask. Also preferably, substrate material is removed to create a recess and at least one channel into the substrate, wherein the channel intersects the recess. At least a portion of the movable member is provided at a location within the recess and at least a portion of the movable member is provided at a location within the channel.

Efficient method of making micro-miniature switch device

A micro-miniature switch apparatus (,) includes a substrate (,) having a surface (,) with first and second channels (,) extending from the surface (,) into the substrate (,). The first and second channels (,) are spaced apart from each other, with a channel axis (,) extending longitudinally through the first and second channels (,). A body (,) that is movable relative to the substrate (,) includes two arms (,). Each of the arms (,) extends into one of the first and second channels (,) to support the body (,) for movement relative to the substrate (,) between first and second electrical conditions of the switch apparatus (,).

Micro-miniature switch apparatus

A method for fabricating a monolithic micro-optical component. The construction of the micro-optical components is accomplished by using standard semiconductor fabrication techniques. The method comprises the steps of depositing an etch stop layer (,) onto a semiconductor substrate (,); depositing an optical component layer (,) onto the etch stop layer (,); coating the entire surface of the optical component layer with a photoresist material; applying a photoresist mask (,) to the photoresist material on the optical component layer (,); selectively etching away the optical component layer (,) to form at least one optical column (,); forming a pedestal (,) for each of the optical columns (,) by selectively etching away the etch stop layer (,); and finally polishing each of the optical columns (,), thereby forming monolithic optical components (,). The method may optionally include the step of removing the photoresist mask from each of the optical columns prior to polishing the optical columns, as well as the step of depositing an antireflectivity coating onto each of the optical components.

Semiconductor micro epi-optical components

A method for fabricating a monolithic micro-optical component. The construction of the micro-optical components is accomplished by using standard semiconductor fabrication techniques. The method comprises the steps of depositing an etch stop layer (44) onto a semiconductor substrate (42); depositing an optical component layer (46) onto the etch stop layer (44); coating the entire surface of the optical component layer with a photoresist material; applying a photoresist mask (50) to the photoresist material on the optical component layer (46); selectively etching away the optical component layer (46) to form at least one optical column (52); forming a pedestal (54) for each of the optical columns (52) by selectively etching away the etch stop layer (44); and finally polishing each of the optical columns (52), thereby forming monolithic optical components (56). The method may optionally include the step of removing the photoresist mask from each of the optical columns prior to polishing the optical columns, as well as the step of depositing an antireflectivity coating onto each of the optical components.

Method for fabricating semiconductor micro epi-optical components

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Temecula, CA, United States of America

Luis M Rochin